Preparation and characterisation of compositionally graded Ba x Sr 1-x TiO 3 thin films

Growth and electrical properties of compositionally graded Pb(ZrxTi1−x)O3 thin films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates

“…PZT/PbTiO 3 or PZT/PbZrO 3 thin films [5], the insertion of the PbTiO 3 (or PbZrO 3 ) layers, can reduce the dielectric constant and loss of PZT films [2]. In our group, the compositionally graded (Pb 1Àx Ca x )TiO 3 have been found to be another promising candidate [6,7]. Recently, compositionally functional structures of ferroelectric thin films have attracted much attention due to their unconventional ferroelectric properties [7][8][9][10].…”

The tunability and dielectric properties of the compositionally graded Ba(Zr x Ti1−x )O3 thin films

“…Recent studies reveal that Ba 1−x Sr x TiO 3 (BST) and Ba (Zr x Ti 1−x )O 3 (BZT) thin films with concentration gradient and with improved dielectric and ferroelectric properties, make a good choice to control the specific property of ferroelectric thin films [1][2][3]. Ba(Zr x Ti 1−x )O 3 (BZT)ceramics and thin films have recently received renewal attention due to a high-strain level and high-piezoelectric effect in both single crystals and ceramics [4][5][6][7].…”

“…It is indicated that the system exhibits a pinched phase transition with increasing Zr concentration. It is obtained by substituting ions at the B site of the BaTiO 3 with Zr in compounds of the perovskite structure ABO 3 . It is reported that an increase in the Zr content induces a reduction in the average grain size, decreases the dielectric constant, and maintains a leakage current low and stable.…”

“…Barium acetate was added in glacial acetic acid solution and heated to 120°C to reflux for 1 h. Ba:glacial acetic acid was in a ratio equal to 1:10 mol. After cooling to room temperature, the mixed solution of Ti(OC 3 H 7 ) 4 , Zr (OC 3 H 7 ) 4 , and Acetylacetone (AcAc CH 3 The crystalline phase of the thin films was identified by X-ray diffraction (BRUKER D8 Advance Diffractometer). The film thickness and the surface morphology were determined by FESEM.…”

Microstructural and Electrical Study of (BA0.6 SR0.4)(ZR1-X Tix)o3 Ceramics

“…BaSrTiO 3 have currently become very attractive for applications in decoupling capacitors, storage capacitors, and dielectric field tunable elements for high-frequency devices [3,4]. The high dielectric constant and low loss makes one of the promising candidates for dynamic random-access memory (DRAM) and tunable microwave device applications [5].…”