2017
DOI: 10.1007/s10854-017-6389-5
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Preparation and characteristics study of CuAlO2/Si heterojunction photodetector by pulsed laser deposition

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Cited by 9 publications
(2 citation statements)
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“…The favorable electrical property originates from incorporating CuO in the CuAlO 2 lattice to enhance the p-type conduction via the synergistic effects of energy band bowing [30,40]. The Si/CuAlO 2 heterostructure photodetectors have been shown to exhibit high responsivity approaching 541 mA/W at 2.5 V bias voltage [41]. In spite of wide direct bandgap energy and favorable type-II band alignment with ZnO for CuAlO 2 , few photodetectors based on ZnO NRs/CuAlO 2 heterostructures have been explored so far.…”
Section: Introductionmentioning
confidence: 99%
“…The favorable electrical property originates from incorporating CuO in the CuAlO 2 lattice to enhance the p-type conduction via the synergistic effects of energy band bowing [30,40]. The Si/CuAlO 2 heterostructure photodetectors have been shown to exhibit high responsivity approaching 541 mA/W at 2.5 V bias voltage [41]. In spite of wide direct bandgap energy and favorable type-II band alignment with ZnO for CuAlO 2 , few photodetectors based on ZnO NRs/CuAlO 2 heterostructures have been explored so far.…”
Section: Introductionmentioning
confidence: 99%
“…Heterojunction photodetectors combine two types of materials for light detection, and Si is the optimal choice for one of the two materials due to mature and cheap Si complementary metal–oxide–semiconductor (CMOS) technology with Si acting as the substrate [ 1 , 2 , 3 ]. Numerous materials have been investigated to be combined with the Si substrate in heterojunction photodetectors for the optimization of photodetector applications, and studies increasingly concentrate on graphene-based materials [ 4 ].…”
Section: Introductionmentioning
confidence: 99%