Preparation and characterization of AlN/FeCoSiB magnetoelectric thin film composites

Spontaneous magnetization reversal and positive exchange bias effect in CoFeSiB/FeCrO3 heterostructures

“…Isothermal field-dependent magnetisation (M(H) loop) at 300 K for the FCO50/CFSB36 structure is shown in figure 2(b) and is measured after cooling the bilayer from 380 K to 300 K under ZFC mode. For H FC = 0 Oe, the loop exhibits a symmetric magnetisation curve, attaining saturation for H > 100 Oe and a saturation magnetisation value of ∼380 emu cc −1 , which is comparable to the value of the soft CFSB layer [4,29,30]. To further investigate the H FC -dependent H EB , the bilayer heterostructure shows EB for different field-cooled values (H FC ) of 1, 5, and 70 kOe, as shown in figure 2(c).…”

Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

“…2(f). The annealing step required to crystallize the SMA must occur before magnetostrictive deposition because amorphous FeCo-SiB is known to crystallize at temperatures above 300°C [7,29]. An advantage to putting FeCoSiB on the backside is the Si substrate is providing a smooth surface for the deposition of FeCoSiB because previously it was shown to significantly improve the soft magnetic properties [30,31].…”

“…Thin-film magnetoelectric (ME) composites are attractive candidates for use in biomagnetic sensors, energy harvesters [1], highly efficient power converters, magnetometers, RF tunable inductors, and mechanical antennas [2,3,4,5]. Heterostructures with aluminum nitride (AlN) serving as the piezoelectric layer and amorphous iron-cobalt silicon boron (FeCoSiB) alloy as the magnetostrictive layer have demonstrated ME coefficients in vacuum as large as 20 kV/cm Oe [6] with limits of detection as low as 1 pT= ffiffiffiffiffiffi Hz p [6,7,8]. The ME voltage and sensitivity can be enhanced by 1-2 orders of magnitude when driven at the mechanical resonant frequency [3,9,10]; therefore, many applications could benefit from a ME composite with a tunable resonant frequency.…”

Giant magnetoelectric coefficient of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3thin film grown on 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3single crystal assisted by metglas

“…The ME measurement of these composite films was performed under open-circuit conditions. 19,20) A shield cover was used to apply H dc as well as shield external signals. Small Helmholtz coils were used to excite an ac magnetic field of 3 Oe (amplitude).…”