2016
DOI: 10.1016/j.matlet.2016.06.026
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Preparation and characterization of highly (222)-oriented bismuth magnesium niobate thin film by sol-gel method

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Cited by 4 publications
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“…Further, the high degree of (2 2 2)-preferred orientation of film grown in O 2 atmosphere is also a key contributor for the high dielectric constant and tunability. [25][26][27] Figure 4(b) shows bias electric field dependence of dielectric constant and loss tangent of BMN thin film grown in the O 2 carrier gas. At a bias filed of ∼1 MV cm −1 , the tunability is 29%, and the loss tangent is 0.008.…”
mentioning
confidence: 99%
“…Further, the high degree of (2 2 2)-preferred orientation of film grown in O 2 atmosphere is also a key contributor for the high dielectric constant and tunability. [25][26][27] Figure 4(b) shows bias electric field dependence of dielectric constant and loss tangent of BMN thin film grown in the O 2 carrier gas. At a bias filed of ∼1 MV cm −1 , the tunability is 29%, and the loss tangent is 0.008.…”
mentioning
confidence: 99%