Preparation and Characterization of Metal Organic Chemical Vapour Deposited Copper Zinc Sulphide Thin Films Using Single Solid Source Precursors

Okafor

Ukhurebor

2021

Walailak J Sci & Tech

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Thin films of copper-zinc sulphide (CxZn1-xS) have been deposited by metal-organic chemical vapour deposition (MOCVD) technique at 400 °C on soda-lime substrates. The films contained copper dithiocarbamate and zinc dithiocarbamate of various concentrations. The effect of the precursor’s concentration was investigated using Fourier transforms infrared (FTIR) spectroscopy and UV-Vis Spectrophotometer. The precursors’ FTIR spectrums have the characteristics of copper sulphide and zinc sulphide absorption bands below 800 cm-1. The optical properties for all the samples were studied by reading the absorbance and transmittance spectra in the range of 300 - 900 nm. The results indicate direct bandgap energy that ranged between 2.20 to 3.42 eV. The films were found to have a very high transmittance in the visible and near-infrared regions and an average reflectance of about 0.14 in the same regions. Optical constants like refractive index, extinction coefficient, and optical conductivity were estimated as a function of photon energy. The various properties exhibited by the films indicate that the films can find application in various optoelectronic devices.

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical Properties of Copper-Zinc Sulphide Network from Mixed Single Solid Source Precursors of Copper and Zinc Dithiocarbamates

Okafor

Ukhurebor

2021

Walailak J Sci & Tech

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“…To ascertain the potentials of the electrochemical prepared Pb-Sn-S TFs for device fabrications, the absorbance was investigated in the spectra wavelength of 300 to 1000 nm. The absorbance A, was measured using the relation in equation(1) [13];…”

Section: Optical Studiesmentioning

confidence: 99%

“…Such decrease in absorbance may be due to structural defects such as surface irregularity and defect density in the Pb-Sn-S system as a result of increase in deposition time [14], as indicated from the XRD measurement. The low absorbing nature of the films consequently indicates an improvement in the transmission [13]. The absorption coefficient (α) of the material was evaluated by means of the equation (2) [15]; 2) assumed a negligible reflectance while T and t are the respective transmittance and thickness of Pb-Sn-S films.…”

Section: Optical Studiesmentioning

confidence: 99%

Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

Damisa¹,

J. Nig. Soc. Phys. Sci.

Ikhioya

2021

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

“…From Eq. ( 3), the index n is known as the power factor of the electronic transition mode and it is given as 1/2 [16]. The refractive index (n) is given by the relation in Eq.…”

Section: Characterization Of Pbsnsthin Filmsmentioning

confidence: 99%

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Damisa

2021

Trends Sci

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The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles