Preparation and characterization of Mn doped copper nitride films with high photocurrent response

Yu, Aiai; Hu, Ruiyuan; Liu, Wei; Zhang, Rui; Zhang, Jian; Pu, Yong; Yang, Jianping; Li, Xing’ao

doi:10.1016/j.cap.2018.07.010

Cited by 22 publications

(11 citation statements)

References 40 publications

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“…6(a), where the absorbance peak platform is from 350-520 nm. The incident photon energy (hm) and the optical bandgap energy (E g ) are related to the transformed Kubelka-Munk equation [35],…”

Section: Resultsmentioning

confidence: 99%

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Chu

et al. 2021

Journal of Energy Chemistry

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Section: Resultsmentioning

confidence: 99%

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Chu

et al. 2021

Journal of Energy Chemistry

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“…However, this also has a direct impact on the optical properties and energy band gap of Cu 3 N, which is strongly dependent on its lattice constant. All estimates of the optical energy band gap determined previously from steady-state UV–vis absorption-transmission spectroscopy, − UV–vis reflectance-transmission, and spectroscopic ellipsometry ,, fall in the range of 1.2 to 2.4 eV. A single value for the optical band gap was determined in each case, but it was not clarified if this corresponds to the direct or indirect energy bandgap.…”

Section: Introductionmentioning

confidence: 99%

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

et al. 2020

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Cu 3 N with a cubic crystal structure has been prepared from Cu on fused SiO 2 under a flow of NH 3 :O 2 between 400 and 600 °C. All Cu 3 N layers exhibited distinct maxima in differential transmission at ∼500, 550, and 630, 670 nm with the same spectral structure and shape on a ps timescale as shown by ultrafast pump-probe spectroscopy. We show that the maxima at 630 (≡1.97 eV) and 670 nm (≡1.85 eV) correspond to the M and R direct energy band gaps of Cu 3 N, in excellent agreement with density functional theory calculations of the electronic band structure. These findings are corroborated further by the fact that Cu 3 N as-deposited by reactive sputtering under 100% N 2 at 25 °C and 10 −2 mbar did not exhibit a fine spectral structure due to a smeared density of states, poor crystallinity, and a high density of defects, but annealing under NH 3 :H 2 at 300 °C revealed a similar spectral structure to Cu 3 N obtained from Cu under NH 3 :O 2 . In contrast to the above, we suggest that the peaks at 500 (≡2.48 eV) and 550 nm (≡2.25 eV) might correspond to the M and R direct gaps of certain regions of Cu 3 N under strain that changes the lattice constant and band gap. We discuss the charge carrier generation and recombination mechanisms in terms of Cu interstitials and vacancies that are known to be energetically located near the band edges, thus allowing the observation of the direct energy band gaps in this defect tolerant semiconductor.

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“…There are two disadvantages in the TiO 2 material. One is the oxygen vacancies resulting from the preparation of the TiO 2 annealed at high temperature . Another is excitation of the electrons in TiO 2 under the UV light, which leads to desorption of the adsorbed oxygen.…”

Section: Resultsmentioning

confidence: 99%

Simultaneously Enhanced Efficiency and Stability of Perovskite Solar Cells with TiO₂@CdS Core–Shell Nanorods Electron Transport Layer

Liu

Chu

Liu

et al. 2019

Adv Materials Inter

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Both demands of stability and efficiency constitute the gargantuan barriers of perovskite solar cells (PSCs), hampering the academic communities and industrial production. Herein, it is demonstrated that, after depositing optimized CdS shell layers on TiO2 nanorod arrays (NAs) by a simple and rapid chemical bath method at room temperature, the efficiency and stability of PSCs are simultaneously enhanced. The PSCs based on TiO2/CdS core–shell NAs achieve higher power conversion efficiency up to 17.71%, compared to 15.93% of the pristine TiO2 NAs‐based cells. Especially, the stability of the PSCs is prominently improved after optimized CdS layer modification without encapsulation. The significant enhancement of both efficiency and stability are mainly ascribed to that the type‐II structure of TiO2/CdS coaxial nanorods can suppress recombination, and the oxygen vacancies on TiO2 surfaces are not directly contacted with perovskite layers. The surface modification on TiO2 NAs opens up an alternative approach toward improving the performance and stability of PSCs.

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Preparation and characterization of Mn doped copper nitride films with high photocurrent response

Cited by 22 publications

References 40 publications

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

Simultaneously Enhanced Efficiency and Stability of Perovskite Solar Cells with TiO₂@CdS Core–Shell Nanorods Electron Transport Layer

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Preparation and characterization of Mn doped copper nitride films with high photocurrent response

Cited by 22 publications

References 40 publications

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Novel photoelectric material of perovskite-like (CH3)3SPbI3 nanorod arrays with high stability

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu3N by Ultrafast Pump-Probe Spectroscopy

Simultaneously Enhanced Efficiency and Stability of Perovskite Solar Cells with TiO2@CdS Core–Shell Nanorods Electron Transport Layer

Contact Info

Product

Resources

About

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

Simultaneously Enhanced Efficiency and Stability of Perovskite Solar Cells with TiO₂@CdS Core–Shell Nanorods Electron Transport Layer