Preparation and characterization of p-type semiconducting tin oxide thin film gas sensors

Abstract

P-type conducting undoped tin oxide thin film gas sensor is fabricated by direct current reactive magnetron sputtering method and calcination technique. Physical characteristics of the undoped tin oxide thin films have been analyzed by Spectroscopic ellipsometer, x-ray diffraction (XRD), scanning electronic microscope, and atomic force microscopy. According to the ethanol sensitivity properties of the sensors, we find that the calcination temperature and the thickness of the films are correlated with the special p-type conducting type; the p-type ultrathin film (10 nm) gas sensor shows better gas sensitivity and less baseline shift. XRD studies indicate that the preferred unidentified diffraction peak at 33.082° favors the formation of p-type conducting. When the intensities of unidentified diffraction peak increases, the gas sensing properties is largely promoted. The response time of the p-type sensor is less than 1 s to 1000 ppm ethanol.

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

“…The sensor annealed at 300 C showed no degradation with repeated exposure to hydrogen/nitrogen ambients. The better sensitivity of the sensor annealed at 300 C was due to an increase of SnO 2 surface contact area, which was consistent with Liu's results in increasing porosity of the SnO 2 layer after annealing [16]. The good sensitivity and reversibility for the SnO 2 -gated HEMT sensors annealed at 300 C were attributed to the larger surface cracks and smaller grain size associated with the high temperature annealing.…”

Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies

“…Defect levels mainly originate from oxygen and tin vacancies; V O and V Sn , respectively. 48 The defect levels, hereafter referred to as VD, are the dominant signals in this energy region (i.e. close to the Fermi level 49 ), and their analysis is done under the assumption that the contribution from the organic layer is suppressed by the oxide signal; this assumption will be discussed further within this manuscript.…”

Crafting a Next-Generation Device Using Iron Oxide Thin Film: A Review

“…In this case, the interdigital-electrodes (IDEs) and a microheater integrated MEMS structure is fashioned and utilized as a substrate chip template of material sensing films. Since most of the iron oxide phase is stable, they are relatively easy to synthesize using various thin film fabrication methods: vacuum and nonvacuum deposition methods such as ALD, 144 liquidphase deposition, 143 RF sputtering, 138 magnetrons sputtering, 146 spin coating, 140 doctor blade, 147 PECVD, 148 electron beam deposition, 149 Langmuir−Blodgett, etc. Iron oxide also could be modified into various thin film microstructures, thus making them easy to integrate into some sensor devices, including the sensor design shown in Figure 7.…”