2011
DOI: 10.1016/s1002-0071(12)60050-1
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Preparation and characterization of PZT thick film enhanced by ZnO nanowhiskers for MEMS piezoelectric generators

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Cited by 12 publications
(5 citation statements)
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“…2.The determined lattice constants "a" and "c" values for the PZT films grown at 550 °C and 650 °C are in correspondence with the reported values. 22,23 The value of crystallite size is increased marginally from 23 nm to 29 nm with increase in the temperature of the annealing from 550 °C to 650 °C along with marginal increase in degree of texturing along (110) plane from 42% to 49%. Similar trend can also be seen from the surface topographical images PZT films after annealing as depicted in the Figures 2c and 2d.…”
Section: Resultsmentioning
confidence: 99%
“…2.The determined lattice constants "a" and "c" values for the PZT films grown at 550 °C and 650 °C are in correspondence with the reported values. 22,23 The value of crystallite size is increased marginally from 23 nm to 29 nm with increase in the temperature of the annealing from 550 °C to 650 °C along with marginal increase in degree of texturing along (110) plane from 42% to 49%. Similar trend can also be seen from the surface topographical images PZT films after annealing as depicted in the Figures 2c and 2d.…”
Section: Resultsmentioning
confidence: 99%
“…Maamet et al [ 9 ] presented the main characteristics of piezoelectric material types, as shown in Table 1 [ 63 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 , 77 , 78 , 79 , 80 , 81 , 82 ].…”
Section: Piezoelectric Materialsmentioning
confidence: 99%
“…It has been reported that PZT(111) would be formed on Nb:STO(111) while it is PZT(001) for Nb:STO(100) because of a small mismatch unit cells [14][15][16]. Alternatively, sol-gel processing is well-suited for depositing high-quality PZT films with good chemical homogeneity, simple and short-time fabrication, easy to control, and less affected by other factors [17][18][19][20]. Thus, fabrication of PZT thin film on Nb:STO(111) substrate by using solution process and investigating on their characteristics are studied.…”
Section: Introductionmentioning
confidence: 99%