“…2.The determined lattice constants "a" and "c" values for the PZT films grown at 550 °C and 650 °C are in correspondence with the reported values. 22,23 The value of crystallite size is increased marginally from 23 nm to 29 nm with increase in the temperature of the annealing from 550 °C to 650 °C along with marginal increase in degree of texturing along (110) plane from 42% to 49%. Similar trend can also be seen from the surface topographical images PZT films after annealing as depicted in the Figures 2c and 2d.…”
Due to increasing growth population and energy demand, energy harvesting technology has become a sensational research topic. Harvesting waste heat has gained significant interest because of its cost effectiveness and availability of significant thermal fluctuations in industrial processes as well as in nearby surroundings. In the present study, the pyroelectric lead zirconium titanate (PZT) thick films grown using modified sol-gel approach have been used for pyroelectric energy conversion. The effect of annealing temperature (450, 450, and 650°C) on the growth of PZT films has been monitored by investigating their dielectric, ferroelectric, and pyroelectric properties. An appreciable enhancement in saturation and remnant polarizations from 17µC/cm2 to 24µC/cm2 (P_s) and 13µC/cm2 to 22µC/cm2 (P_r) has been obtained when annealed temperature is increased from 550 to 650°C, respectively. The pyro electric coefficient and figure of merit are found to increase from 25x10-3 Cm-2K-1 to 230x10-3 Cm-2K-1 (p) and from 2.2 m2C-1to 20 m2C-1 for the optimized PZT thick film based pyroelectric device with increase in the external DC bias field from 0.5 to 2.5 V. The enhanced results of pyroelectric coefficient and figure of merit achieved are good indication of electrical energy harvesting.
“…2.The determined lattice constants "a" and "c" values for the PZT films grown at 550 °C and 650 °C are in correspondence with the reported values. 22,23 The value of crystallite size is increased marginally from 23 nm to 29 nm with increase in the temperature of the annealing from 550 °C to 650 °C along with marginal increase in degree of texturing along (110) plane from 42% to 49%. Similar trend can also be seen from the surface topographical images PZT films after annealing as depicted in the Figures 2c and 2d.…”
Due to increasing growth population and energy demand, energy harvesting technology has become a sensational research topic. Harvesting waste heat has gained significant interest because of its cost effectiveness and availability of significant thermal fluctuations in industrial processes as well as in nearby surroundings. In the present study, the pyroelectric lead zirconium titanate (PZT) thick films grown using modified sol-gel approach have been used for pyroelectric energy conversion. The effect of annealing temperature (450, 450, and 650°C) on the growth of PZT films has been monitored by investigating their dielectric, ferroelectric, and pyroelectric properties. An appreciable enhancement in saturation and remnant polarizations from 17µC/cm2 to 24µC/cm2 (P_s) and 13µC/cm2 to 22µC/cm2 (P_r) has been obtained when annealed temperature is increased from 550 to 650°C, respectively. The pyro electric coefficient and figure of merit are found to increase from 25x10-3 Cm-2K-1 to 230x10-3 Cm-2K-1 (p) and from 2.2 m2C-1to 20 m2C-1 for the optimized PZT thick film based pyroelectric device with increase in the external DC bias field from 0.5 to 2.5 V. The enhanced results of pyroelectric coefficient and figure of merit achieved are good indication of electrical energy harvesting.
The goal of this paper is to review current methods of energy harvesting, while focusing on piezoelectric energy harvesting. The piezoelectric energy harvesting technique is based on the materials’ property of generating an electric field when a mechanical force is applied. This phenomenon is known as the direct piezoelectric effect. Piezoelectric transducers can be of different shapes and materials, making them suitable for a multitude of applications. To optimize the use of piezoelectric devices in applications, a model is needed to observe the behavior in the time and frequency domain. In addition to different aspects of piezoelectric modeling, this paper also presents several circuits used to maximize the energy harvested.
“…It has been reported that PZT(111) would be formed on Nb:STO(111) while it is PZT(001) for Nb:STO(100) because of a small mismatch unit cells [14][15][16]. Alternatively, sol-gel processing is well-suited for depositing high-quality PZT films with good chemical homogeneity, simple and short-time fabrication, easy to control, and less affected by other factors [17][18][19][20]. Thus, fabrication of PZT thin film on Nb:STO(111) substrate by using solution process and investigating on their characteristics are studied.…”
PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 µC/cm2 and leakage current of 8×10-8 A were obtained at applied voltage of 5 V.
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