Preparation and characterization of Zn18O/Zn16O isotope heterostructure thin films

Matsumoto, Kenji; Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime

doi:10.1016/j.jeurceramsoc.2009.06.023

Cited by 3 publications

(2 citation statements)

References 25 publications

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“…When plasma treatment was applied, oxygen radicals migrated deep into the film and mitigated the formation of gallium concentration near the film surface. Zhen et al [29] used an oxygen isotopic tracer to show that the concentration of background monoatomic oxygen in SnO 2 film deposited by plasma-assisted PLD method was at least 50%, whereas concentration of background diatomic oxygen in SnO 2 film deposited in non-reactive background was only 1%-4%. Ambient oxygen atom migrated much deeper into the film in reactive case than it was in nonreactive case.…”

Section:    mentioning

confidence: 99%

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Hu¹,

Saito²,

Tanaka³

et al. 2019

J. Semicond.

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Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition (PLD). An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency (RF) power on growth rate was investigated. A film grown with plasma assistance showed 2.7 times faster growth rate. X-ray diffraction and Raman spectroscopy analysis showed β-Ga2O3 films grown with plasma assistance at 500 °C. The roughness of the films decreased when the RF power of plasma treatment increased. Transmittance of these films was at least 80% and showed sharp absorption edge at 250 nm which was consistent with data previously reported.

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Section:    mentioning

confidence: 99%

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Hu¹,

Saito²,

Tanaka³

et al. 2019

J. Semicond.

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“…This includes ( 69 GaX) n ( 71 GaX) n [X ¼ P or As] by Go ¨bel et al, 1) ( 70 Ge) n ( 74 Ge) n by Morita et al, 2) and (Zn 18 O) n (Zn 16 O) n by Haneda and coworkers. 3) Furthermore, Watanabe and coworkers reported the successful observation of the electron confinement effect in diamond films by fabricating isotope superlattices of 12 C n / 13 C n instead of those with layers that varied in elemental composition. 4) On the other hand, such isotopic modifications also sometimes induce exotic properties that would have never been found otherwise.…”

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confidence: 99%

Enhancement of Quantum Ferroelectricity in SrTi$^{18}$O$_{3}$ Thin Film

Fujii¹,

Maeda²,

Katayama³

et al. 2011

Appl. Phys. Express

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We fabricated 18O-exchanged SrTi18O0.03x16O0.03(100-x) (STO18) thin films on SrTi16O3(001) single-crystal substrates by pulsed laser deposition from a SrTi18O3 single-crystal target at various growth temperatures and 16O2 partial pressures. The diffusion of 16O from the substrate could be successfully suppressed by growing films under high 16O2 partial pressures, and a homogeneously 18O-exchanged STO18 thin film (x = 60) was then obtained. The STO18 film became ferroelectric at a critical temperature higher than that expected from the corresponding STO18 bulk sample by ∼10 K, at which the Raman spectra suggested that the first-order transition occurred, different from the case of the STO18 bulk.

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Investigations of growth kinetics of pulsed laser deposition of tin oxide films by isotope tracer technique

Zhen

Ohsawa

Adachi

et al. 2010

Journal of Applied Physics

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Tin dioxide (SnO2) is an important semiconductor oxide that exhibits many interesting optoelectronic properties. Furthermore, the physical and chemical deposition of single crystalline films from vapor phase is the most promising way for growing high-quality SnO2 films. In this paper, the growth kinetics of the pulsed laser deposition (PLD) of SnO2 films has been elucidated by varying the growth conditions and using the isotope tracer technique. We have experimentally demonstrated that relatively low oxygen partial pressures and high growth temperatures cause the re-evaporation of Sn from the surface of a growing film; these conditions are essential to achieve layer-by-layer growth of SnO2 by PLD. Further, when a TiO2 substrate with an atomically flat surface was used, the SnO2 film had an atomically flat surface.

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Preparation and characterization of Zn18O/Zn16O isotope heterostructure thin films

Cited by 3 publications

References 25 publications

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Enhancement of Quantum Ferroelectricity in SrTi$^{18}$O$_{3}$ Thin Film

Investigations of growth kinetics of pulsed laser deposition of tin oxide films by isotope tracer technique

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