Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation

Fabrication techniques and material properties of dielectric MgO thin films—A status review

“…Experimental evidence showed that the peak intensity of MgO h2 0 0i was greatly improved for the films deposited at O 2 pressure of 10 À2 Pa than 10 À3 Pa [27]. This result suggested that perfect h1 0 0i oriented MgO films could be deposited in low O 2 pressure, which is apparently different from that reported in the literature [140,141]. But high oxygen content leads to an increase in particles formation and consequently to a decrease in the deposition rate [88].…”

Pulsed laser deposited Er3+,Yb3+:YVO4 waveguiding films on MgO/Si substrates

“…The crystallinity of MgO layer strongly depends on the oxygen pressure applied during depositions as reported previously [12]. However, the experimental conditions reported for deposition of oriented MgO layer are quite different [13][14][15][16][17][18]. For this reason and bearing in mind our previous experiences for deposition of oxide films, the oxygen pressure of 1 Pa was selected.…”

Epitaxial growth of atomic-scale smooth Ir electrode films on MgO buffered Si(100) substrates by PLD

“…Then, the in situ deposition of MgO film was carried out successively in an O 2 ambient with a pressure of 1 Â 10 À4 Torr. The oxygen gas was introduced into the chamber with a delay time of 60 s after the deposition of MgO film had started, which was reported to prevent the formation of amorphous MgO layers [11]. Ir films were then grown on the MgO/Si by ablating a metal Ir (purity>99.9%) target with a laser fluence of 7 J/cm 2 at a pressure of 1 Â 10 À7 Torr.…”