1998
DOI: 10.1143/jjap.37.5104
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Preparation and Dielectric Property of BaTiO3–SrTiO3 Artificially Modulated Structures

Abstract: Differential cross sections for the reaction 3He(n-, z')~H are calculated using the optical model. It is shown that the charge-exchange scattering is not very sensitive to changes in the magnetic radius of the 3He nucleus.

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Cited by 47 publications
(22 citation statements)
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“…Slim ferroelectric loop (low coercive field) is a typical characteristic for ferroelectric relaxor materials. On the other hand, asymmetry behavior was also observed in the 8-E plot of the SL films, Similar behavior in polarization loops was observed by Lee et al in case of three-component ferroelectric SLs [13] in BT/ST SLs [8], and BT/Bao.3oSr 0 .7oTi03 [14]; it can be related to: i) the electrode asymmetry, different work function (WF) for the bottom (Lao.67Sro.3 3 Mn0 3 -WF-4.96 eV) and top (Pt -WF~ 5.65 eV) electrodes [15] and (iii) compositionally broken inversion symmetry with the creation of new lattices in the SLs [16]. With the fast development of power electronics in pulsed power and power conditioning applications, there is a need for next-generation dielectric capacitors with high energy density/low loss.…”
Section: Resultssupporting
confidence: 84%
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“…Slim ferroelectric loop (low coercive field) is a typical characteristic for ferroelectric relaxor materials. On the other hand, asymmetry behavior was also observed in the 8-E plot of the SL films, Similar behavior in polarization loops was observed by Lee et al in case of three-component ferroelectric SLs [13] in BT/ST SLs [8], and BT/Bao.3oSr 0 .7oTi03 [14]; it can be related to: i) the electrode asymmetry, different work function (WF) for the bottom (Lao.67Sro.3 3 Mn0 3 -WF-4.96 eV) and top (Pt -WF~ 5.65 eV) electrodes [15] and (iii) compositionally broken inversion symmetry with the creation of new lattices in the SLs [16]. With the fast development of power electronics in pulsed power and power conditioning applications, there is a need for next-generation dielectric capacitors with high energy density/low loss.…”
Section: Resultssupporting
confidence: 84%
“…However few studies have been done to study the effect of manipulation of the degree of strain by changing the composition of one of the constituents of the SLs and investigate the effect on their structural, electrical, and ferroelectric properties. Some related works were done in ferroelectric SLs by Tsurumi et al [8] using molecular beam epitaxy grown BT/ST SLs where the chemical composition was continuously changed along the film thickness. Hesse's group [9,10] studied the effect of interfacial strain in graded multiferroic SLs of Lao.7Sr 0 .…”
Section: Introductionmentioning
confidence: 99%
“…Over the past several decades no further developments were reported on that effect. The idea of polarization gradient associated stress should be interesting to those working on artificial structures with intentionally designed polarization gradients [26,27], and to the study of domain boundaries where there exist naturally polarization gradients. In fact, even for a finite crystal with uniform polarization in the volume, polarization gradient at the surface may act as a source of internal stress.…”
mentioning
confidence: 99%
“…Multilayer SrTiO 3 /BaTiO 3 thin films were fabricated on LaNiO 3 -buffered Pt/Ti/SiO 2 /Si substrates by a sol-gel deposition process, and the relaxation and nonlinear behaviors have been reported by Zhai et al [16] Furthermore, dielectric superlattices have been developed in which BaTiO 3 and SrTiO 3 layers are attached alternately by multitarget pulsed laser deposition. [7] Highly textured SrTiO 3 /BaTiO 3 multilayer with an artificial lattice structure produced by pulsed laser deposition in off-axis geometry on SrTiO 3 :Nb single crystals has been reported by Koebernik et al [17] Meanwhile, Kim et al [18] investigated epitaxial SrTiO 3 / BaTiO 3 artificial superlattices grown on TiN buffered Si(001) substrates by a pulsed laser deposition process, and examined the effect of stacking periodicity and process oxygen partial pressure on their crystallinity and dielectric properties. Layer by layer deposition via pulsed laser onto sapphire substrates with and without Pt/Ti electrodes [19] and an alternating evaporation method using an atomic-layer-epitaxy control system for molecular beam epitaxy [20] have also been presented.…”
Section: Introductionmentioning
confidence: 97%
“…[6] Perovskite compounds in the BaTiO 3 -SrTiO 3 system are the most promising candidates for the fabrication DRAMs with very large scale integration and have been extensively studied with respect to the dielectric properties of the paraelectric phase. [7] The fabrication of superlattice materials constitutes a powerful method to control the crystal structure and ferroelectric properties artificially over a wide temperature range, [8] explore predications of giant dielectric constants, [9,10] and produce new functional devices. [11] Ferroelectric multilayer thin films, such as PbTiO 3 /Pt/ PbTiO 3 ultrathin multilayer capacitors, have been prepared by a sol-gel process.…”
Section: Introductionmentioning
confidence: 99%