Preparation and electrical properties of amorphous InSb

Eckenbach, W.; Fuhs, W.; Stuke, J.

doi:10.1016/0022-3093(71)90035-4

Cited by 39 publications

(7 citation statements)

References 3 publications

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“…Since it was necessary to cool the substrates in some cases, in our investigations flash evaporation was used. The details of this technique were similar to those described in [14].…”

Section: Preparation Structure and Density Of The Samplesmentioning

confidence: 99%

Optical properties of amorphous III–V compounds. I. Experiment

Stuke

Zimmerer

1972

Physica Status Solidi (b)

131

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From reflectivity measurements el and cZ, the real and imaginary part of the dielectric constant, of the amorphous 111-V compounds InSb, InAs, InP, GaSb, GaAs, and GaP are determined in the fundamental absorption region up to 12 eV. Compared with the corresponding curves of the crystals, the spectra of the disordered materials are smeared out and shifted t o lower energy. This shift leads to an increase of ~~( 0 ) . I n the energy region of the &-peaks a selective decrease of 8% is observed. The results for e2 are briefly discussed in terms of structural properties, and a modified Penn model is applied to the spectral dependence of E,.Aus Messungen des Reflexionsvermogens werden Real-und Imaginarteil der Dielektrizitatskonstanten der amorphen 111-V Verbindungen InSb, InAs, InP, GaSb, GaAs und GaP im Bereich der Fundamentalabsorption bis 12 eV bestimmt. Verglichen mit den entsprechenden Kristall-Kurven sind die Spektren der ungeordneten Materialien verwischt und zu kleinerer Energie verschoben. Diese Verschiebung bewirkt ein Ansteigen von ~~(0). I m Energiebereich der &-Maxima wird eine selektive Abnahme von c2 beobachtet. Die e2-Ergebnisse werden kurz im Zusammenhang mit St,ruktnrfragen diskutiert, und ein modifiziertes Perm-Model1 wird auf die Spektralabhangigkeit von e2 angewandt.

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“…Since it was necessary to cool the substrates in some cases, in our investigations flash evaporation was used. The details of this technique were similar to those described in [14].…”

Section: Preparation Structure and Density Of The Samplesmentioning

confidence: 99%

Optical properties of amorphous III–V compounds. I. Experiment

Stuke

Zimmerer

1972

Physica Status Solidi (b)

131

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“…Eckenbach et al [8] have obtained a-InSb films hy flash evaporation onto cooled substrates kept in the temperatnrc range 150 to 200 K. The conductivity of these films increases irreversibly by many orders of magnitude and then follows reversible exponential variation for films heated above 200 K. This behsviour has led these authors to speculate that for films deposited below ~2 0 0 K, In and Sb are phase separated in a-InSh films. I n contrast to these results, Hauser [9] has reported that the clectrical conductivity of getter sputtered a-InSb films shows simple annealing behaviour similar [ 10, 111 to that of a-Gc films.…”

Section: Introductionmentioning

confidence: 99%

Transport properties of amorphous InSb and GaAs

Barthwal

Chopra

1976

Phys. Stat. Sol. (a)

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Electrical conductivity and thermoelectric power of flash evaporated amorphous films of InSb and GaAs are investigated as a function of temperature of boat (evaporation temperature), substrate temperature, deposition at an angle of incidence of vapour beam, and annealing treatment. The properties of the films are very sensitive to the boat temperature; the range of exponential variation of the conductivity with inverse temperature and the corresponding activation energy increase with boat temperature. The thermoelectric power also shows large changes, being relatively temperature independent for films deposited at low boat temperatures and strongly temperature dependent for films deposited at high boat temperatures. The effects of substrate temperature are qualitatively similar to those of evaporation temperature. Annealing of as‐deposited films increases the temperature dependence of the conductivity as well as the thermoelectric power. Electron microscopy and diffraction studies suggest that these results are due to occurrence of an excess of group V element in the film. The excess is a function of the evaporation and deposition temperatures.

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“…For instance, Tanaka [30] mentioned a mobility gap of 2.8 eV for glassy As 2 S 3 whereas for As 2 Se 3 Zakery and Elliott [31] attribute a mobility gap of 1.1 eV and for As 2 Te 3 glasses Weiser and Brodsky attribute a mobility gap of 0.8 eV [32]. For glassy InSb Eckenbach et al [33] reported a band gap of 0.65 eV and for In 2 Te 3 [34] reported one of 1.04 eV. On the other hand, single phase Ga 6 Sb 5 Te has a band gap E g = 0.65 eV [35].…”

Section: Discussionmentioning

confidence: 98%