Preparation and photodetection performance oftwo-dimensional In&amp;lt;sub&amp;gt;2/3&amp;lt;/sub&amp;gt;PSe&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt; nanosheets

Liu, Guiheng; Sun, Zhao‐Yu; Su, Jianwei; Feng, Xinliang; Peng, Qiaojun; Li, Huiqiao; Zhai, Tianrui

doi:10.1360/tb-2021-0126

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…[1][2][3] In particular, resulting from their ultimate thinness, 2D materials exhibit exceptional tunability via an external electrical field, not only making them an ideal platform for fundamental studies in solid-state physics, [4][5][6][7][8][9][10][11] but also rendering them as promising candidate channel materials beyond silicon in the future field-effect-transistors (FETs) for their excellent gate controllability. [12][13][14][15][16][17][18] Such a control over 2D materials by electrical field is ubiquitous, which is usually carried out via an FET architecture. [19][20][21][22][23] 2D materials are gated through dielectric polarization so that their charge density and conductance can be effectively tuned by a gate voltage.…”

Section: Introductionmentioning

confidence: 99%

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

Yang

Liu

et al. 2023

Advanced Materials

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Figure 3. Issue of conventional dielectric integration on 2D semiconductors. a) Schematics of ALD on 2D semiconductors. Nucleation occurs preferably at some defective sites and results in porous dielectric films. b) Cross-section TEM image of HfO 2 deposited on MoS 2 showing island-type growth with pinholes. c) Surface morphology showing random nucleation of Al 2 O 3 on MoS 2 , resulting in a discontinuous film. b, c) Adapted with permission. [54]

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Section: Introductionmentioning

confidence: 99%

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

Yang

Liu

et al. 2023

Advanced Materials

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“…Owing to the large illumination area and configurated charge carriers transport route, 2D semiconductors have been developed for various photodetectors. [30][31][32] Most detectors are stimulated by high-power lasers (>100 mW cm −2 ), [33] but the safe threshold for human eyes is less than 10 mW cm −2 . Therefore, photodetectors should be designed to work with low light stimulation in practice, and some complex heterostructure channels or diverse device structures have been proposed.…”

Section: Properties Of the Vp Flake-based Photodetectormentioning

confidence: 99%

Fabrication of Single‐Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

Da,

Zhou,

Zhang

et al. 2024

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Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer‐free VP flakes have not been demonstrated. Herein, a bismuth‐assisted vapor phase transport technique is designed to grow uniform single‐crystal VP flakes on the SiO2/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid‐exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W−1 and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high‐sensitivity photodetection. As a result, the detectivity is 1.38 × 1013 Jones that is comparable with that of the vdW p–n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single‐crystal semiconductor thin films.

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Simultaneous optical power insensitivity and non-volatile wavelength trimming using 2D In4/3P2Se6 integration in silicon photonics

Tamalampudi,

Dushaq,

Serunjogi

et al. 2024

npj 2D Mater Appl

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In integrated photonic circuits, microring resonators are essential building blocks but are susceptible to phase errors due to fabrication imperfections and optical power fluctuations. Conventional active phase tuning methods are power-intensive and challenging to integrate into densely packed photonic chips. This study proposes a solution by integrating a thin 2D layer of In4/3P2Se6 (InPSe) onto silicon microring resonators (Si-MRR). This approach mitigates sensitivity to laser power and achieves non-volatile wavelength trimming. Under bias voltage, the device exhibits electro-optic behavior, offering a non-volatile phase trimming rate of −2.62 pm/V to −4.62 pm/V, corresponding to InPSe thicknesses of 45 nm to 120 nm. Low optical losses of 0.0091 to 0.0361 dB/μm were also measured, corresponding to thicknesses of 30 nm to 120 nm. The devices demonstrate stable in-situ resonance wavelength stabilization and bidirectional trimming, ensuring cyclic stability for non-volatile phase control. This advancement enhances the performance of silicon photonics across diverse applications, facilitating high-capacity, high-power operation in compact designs.

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Preparation and photodetection performance oftwo-dimensional In<sub>2/3</sub>PSe<sub>3</sub> nanosheets

Cited by 4 publications

References 19 publications

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

Fabrication of Single‐Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

Simultaneous optical power insensitivity and non-volatile wavelength trimming using 2D In4/3P2Se6 integration in silicon photonics

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