Preparation and Properties of GaN Films on GaAs Substrates

Yang, Ying; Ma, Hongjuan; Ma, Jin; Zhang, Yafei

doi:10.1088/0256-307x/21/5/054

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…Figure 1c shows the O 1s peak centered at ∼532.0 eV, which might be coming from the chemisorbed oxygen on the surface. 17 This is another indication that the Ga-O related bonding is absent in our GaN layer. Overall, it is confirmed that the GaN layer has been successfully grown on GaAs substrate by RF-sputtering.…”

Section: Resultsmentioning

confidence: 73%

“…The pattern of the spectra is almost similar to the other published works. [15][16][17] By looking at the Ga 3d spectrum, a broad peak centered at around 24.0 eV can be observed and it may relate to oxygen impurities during the growth of the GaN layer. Such peak was observed by Sidorenko et al 18 Even though the evidence of the oxygen impurities is detectable in the spectrum, there is no presence of Ga-O bonding in the GaN layer.…”

Section: Resultsmentioning

confidence: 99%

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Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching

Taib

Zainal

Hassan

et al. 2016

ECS J. Solid State Sci. Technol.

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At the first stage of this work, growth of polycrystalline GaN layer on GaAs (100) substrate using RF-sputtering was demonstrated at room temperature, with and without the insertion of AlN as a buffer layer. Diffraction pattern from XRD measurement of the samples showed the evidence of GaN in (101¯0) and (0002) orientations. It was found that the FWHM of the GaN (101¯0) for both samples, with and without the AlN buffer layer were 0.17°. However, the FWHM of the GaN (0002) peak for the sample with the AlN buffer layer was 0.08°, while without the AlN buffer layer was 0.16°. Next, both samples were fabricated into porous structure through electroless etching for 3 and 5 minutes, respectively. The cubic inverse truncated pyramid-like porous structure was observed. Detailed inspection found that the etching rate reduced as the etching time increased. More interestingly, the 3 minutes etched-porous on the GaN sample without the AlN buffer layer showed better porosity compared to its counterparts. It is proposed that low properties of GaN sample tends to have high etching rate and better porosity profile in term of pores distribution and density and this is due to weak Ga-N bonding.

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Section: Resultsmentioning

confidence: 73%