Preparation and properties of InAs1-xPx Alloys

Thompson, Amanda L.; Wagner, Jürgen

doi:10.1016/s0022-3697(71)80107-5

Cited by 33 publications

(7 citation statements)

References 13 publications

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“…As expected, the melt growth values (16,17) of the impurity distribution coefficients which are shown in Table I differ from the solution growth values because of the large difference in growth temperature. Rosztoczy used similar growth temperatures to ours but his indium solutions were saturated with polycrystalline InP feed material and not with phosphine.…”

Section: Seleniumsupporting

confidence: 70%

Indium Phosphide

Williams¹,

Porteous²,

Astles³

et al. 1973

J. Electrochem. Soc.

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Indium phosphide double epitaxy light emitting diodes with a 1.5% quantum efficiency and 1.3% power efficiency at 300~ are reported. The emission spectrum half width is 50% of the amphoterically doped GaAs diode spectrum and this makes the diodes four times more efficient as infrared pumps for the two-photon phosphor green emitting diodes. The peak of the diode emission varies from 1.29 to 1.30 eV at 300~ Indium phosphide infrared light emitting diodes can be made into green lamps by coating them with two I Present address:

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Section: Seleniumsupporting

confidence: 70%

Indium Phosphide

Williams¹,

Porteous²,

Astles³

et al. 1973

J. Electrochem. Soc.

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“… a The first column represents the strain in a percentage with respect to the original cell of a bulk InAs. The experimental values of the band gap and the effective mass for the bulk InAs are shown in the last row. b Ref . c Ref . d Ref . …”

Section: Resultsmentioning

confidence: 99%

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Kim

Lee

et al. 2013

ACS Nano

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We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.

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“…Prior work has focused on single, mismatched InAsP layers grown on InP without benefit of dislocation filtering graded buffers. [11][12][13][14][15][16][17][18] The presence of varying defect density and different degrees of residual strain present in such structures can give rise to ambiguity with regard to interpreting carrier transport in these alloys. Given the rapidly increasing interest in InAsP for device applications that has been enabled by improved capabilities in InAsP graded buffer growth, careful evaluation of carrier transport in high structural quality InAsP alloys is of interest.…”

Section: Introductionmentioning

confidence: 99%