2010
DOI: 10.1080/00150193.2010.483388
|View full text |Cite
|
Sign up to set email alerts
|

Preparation and Properties of Pb1-xSrx(Zr0.53Ti0.47) O3Thin Films by Sol-Gel Method

Abstract: Pb 1-x Sr x (Zr 0.53 Ti 0.47 ) O 3 (PSZT) thin films with different x values (x = 0, 0.02, 0.04, 0.06) are prepared by sol-gel method and their properties are studied. All PSZT thin films get a single perovskite phase. The dielectric properties are studied. The leakage current density at an applied electric field of 61.2 kV/cm is 293.0 × 10 −9 A/cm 2 when x = 0.04. The remanent polarization and coercive field values of the PSZT (x = 0) thin film are 8.4 µC/cm 2 and 67.5kV/cm, respectively.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 6 publications
0
0
0
Order By: Relevance