1996
DOI: 10.1016/s0169-4332(96)00223-1
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Preparation and properties of thin polycrystalline MnSi1.73 films

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Cited by 41 publications
(16 citation statements)
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“…However, it is hard to distinguish between different phases of HMS. 7,8 From the other side, resistivity of HMS indicates the behavior usually observed for degenerate semiconductors: at temperatures below 500 K, the resistivity increases with temperature, while above 500 K, the resistivity starts decreasing exponentially indicating the gap of about 0.4 eV. 9,10 The Hall effect measurements identify holes to be the dominant carriers in the whole temperature range, [9][10][11] and the hole mobility is shown to be very small.…”
Section: Introductionmentioning
confidence: 68%
See 1 more Smart Citation
“…However, it is hard to distinguish between different phases of HMS. 7,8 From the other side, resistivity of HMS indicates the behavior usually observed for degenerate semiconductors: at temperatures below 500 K, the resistivity increases with temperature, while above 500 K, the resistivity starts decreasing exponentially indicating the gap of about 0.4 eV. 9,10 The Hall effect measurements identify holes to be the dominant carriers in the whole temperature range, [9][10][11] and the hole mobility is shown to be very small.…”
Section: Introductionmentioning
confidence: 68%
“…9,10 The Hall effect measurements identify holes to be the dominant carriers in the whole temperature range, [9][10][11] and the hole mobility is shown to be very small. [8][9][10][11] The band gaps for bulk samples were found to scatter from 0.4 eV ͑Ref. 9͒ to 0.7 eV ͑Ref.…”
Section: Introductionmentioning
confidence: 99%
“…The absorption coefficient was governed by the formula for allowed direct transition, (α·hν) 2~( hν~E g ), as the direct transition in this system was confirmed from the plot of (α·hν) 2 vs hν for various Mn compositions at 300 K. The values of the corresponding band gap energy (E g ) were estimated by extrapolation of the apparent linear region, revealing the existence of the direct band gap. In addition, the band gap measured by the absorption spectra at room [10][11][12]. The decrease of the energy gap with increasing Mn content may be due to an increase in the lattice constant.…”
Section: Methodsmentioning
confidence: 99%
“…In previous studies, HMS has been successfully synthesized using different methods: solid phase reaction, sputtering, reactive deposition epitaxy, and chemical reaction [4][5][6][7]. However, there are some disagreements in the reported physical properties of HMS [8], and it was suggested that these discrepancies come from the subtle structural differences in the complex crystal structures of HMS [6].…”
Section: Introductionmentioning
confidence: 99%
“…However, there are some disagreements in the reported physical properties of HMS [8], and it was suggested that these discrepancies come from the subtle structural differences in the complex crystal structures of HMS [6]. Four HMS Mn 4 Si 7 [9], Mn 11 Si 19 [10], Mn 15 Si 26 [11], and Mn 27 Si 47 [12] are reported in literature.…”
Section: Introductionmentioning
confidence: 99%