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Crystallization of amorphous silicon films deposited over surface‐relief structures etched into SiO2 layers is achieved by large area processing with incoherent light pulses of 10 ms duration. The structures are either gratings with a constant top width of 3 μm and bottoms with a width between 3 and 20 μm or otherwise shaped artificial surface‐relief micropatterns. The crystalline films are found to consist of very large crystallites, which are either separated from each other by grain boundaries or twinned to one another.

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