Preparation and Raman study of B-doped Si microcrystals

Kanzawa, Yuchi; Fujii, Minoru; Hayashi, Shinji; Yamamoto, Keiichi

doi:10.1016/s0921-5093(96)10303-8

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…In our previous work, we have studied B-doped nc-Si as small as 8 nm in diameter by Raman spectroscopy. 5,6 We demonstrated that, under blue excitation, the nanocrystals show a broad Raman peak with a tail towards the low-energy side of the peak due to phonon confinement effects. As the excitation wavelength was increased, the spectral shape changed gradually and under the excitation of 676.5 nm light, we observed an asymmetric peak with a tail towards the high-energy side of the peak.…”

Section: Resultsmentioning

confidence: 79%

“…The B-doped nc-Si were prepared by the cosputtering method. 5,6 Small pieces of Si chips (5ϫ15 mm 2 ) and B 2 O 3 pellets ͑10 mm in diameter͒ were placed on a SiO 2 sputtering target ͑10 cm in diameter͒ and they were cosputtered in Ar gas of 2.7 Pa. Films about 2 m in thickness were deposited on fused quartz plates and Si wafers.…”

Section: Methodsmentioning

confidence: 99%

“…During the past decade, optical properties of Si nanostructures have been the subject of intensive investigations because the quantum confinement effects of electrons and holes lead to optical properties much different from those of bulk Si crystals. [1][2][3][4][5][6][7] Photoluminescence ͑PL͒ properties in particular have widely been studied and the relationship between the size of nanostructures and the PL peak energy has been revealed experimentally for at least red and infrared PL. 4,7 However, there remain large differences between the PL peak energies observed and the calculated band gap, 4,7 and thus the mechanism of the PL is not yet fully understood.…”

Section: Introductionmentioning

confidence: 99%

“…In our previous work, 5,6 we succeeded in preparing Bdoped Si nanocrystals ͑nc-Si͒ by a cosputtering method. We have confirmed the doping of B atoms into Si nanocrystals by Raman spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from B-doped Si nanocrystals

Fujii

Hayashi

Yamamoto

1998

Journal of Applied Physics

114

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Boron-doped Si nanocrystals as small as 3.5 nm were prepared and their photoluminescence ͑PL͒ properties were studied. The PL properties were found to be very sensitive to the B concentration. For the sample without B doping the temperature-dependent shift of the PL peak was almost the same as that of the bulk band gap. As the B concentration increased, the temperature dependence deviated from that of the bulk band gap, and the peak exhibited a low-energy shift as the temperature decreased. The anomalous temperature dependence is considered to be due to the contribution of the PL from excitons bound to the neutral B states.

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Section: Resultsmentioning

confidence: 79%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from B-doped Si nanocrystals

Fujii

Hayashi

Yamamoto

1998

Journal of Applied Physics

114

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“…A solubility of small boron atoms in the silicon matrix is surprisingly low (usually below 0.5 at. %). − Thus, creating Si 1– x B x alloys with the diamond-type structure is technically challenging. In addition, there are difficulties in quantitative determination of boron content in Si 1– x B x by conventional chemical and microscopic techniques.…”

Section: Introductionmentioning

confidence: 99%

Bulk Silicon Crystals with the High Boron Content, Si_1–xB_x: Two Semiconductors Form an Unusual Metal

et al. 2014

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Silicon is a key technological material, and its controlled doping is one of the simple and effective ways which are applied for creation of new advanced materials with tunable optoelectronic properties. Boron was known to be a dopant that can dramatically change the properties of silicon. However, a limited solubility of boron atoms in silicon matrix strongly restricted creation of bulk diamond-type structured Si−B alloys with the high boron content exceeding 0.5−1 at. %. In this work we show that bulk Si 1−x B x alloys with a rather high boron content (e.g., 2.4 at. %) may be fabricated by alloying of boron and silicon at high temperatures above the melting point of silicon and high pressure. We extensively investigated the electronic transport and optical properties of these alloys using several techniques, including electrical resistivity, Hall effect, magnetoresistance, Raman, IR and optical spectroscopy, and X-ray diffraction. We found that Si 1−x B x solid solutions are metals that possess very unusual optical properties, e.g., they demonstrate the antiresonant Raman spectra and the loss of the reflectivity in the near-IR range. Our work indicates new perspectives in creation and applications of Si 1−x B x solid solutions with the diamond-type structure.

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