Preparation and room temperature photoluminescence characterization of PbS/Si(100) thin films

Kaci, S.; Keffous, A.; Guerbous, L.; Trari, M.

doi:10.1016/j.tsf.2011.06.047

Cited by 17 publications

(6 citation statements)

References 42 publications

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“…Such high values of band gap width can be attributed to the quantum confinement effect, due to the small grain size in the nanocrystalline PbS thin films. The obtained band gap width is consistent with the reported values [15,16].…”

Section: B-217supporting

confidence: 92%

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

2015

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Lead sulfide thin films are deposited on glass substrates at room temperature for 2 h by chemical bath deposition. The structure, surface morphology, optical and electrical properties of the thin films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and the Hall effect measurements. The obtained films show the formation of well crystallized PbS with a cubic rock salt structure and with the preferential orientation (111) plane. The lattice parameter and crystallite size of the films are found as a = 600 Å and 62 nm from the X-ray reflectivity data from the atomic force microscopy image, respectively. The band gap width of the films is determined as 2.84 eV. The optical parameters of the films such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant are evaluated. Moreover, from the Hall measurements, electrical resistivity, conductivity carrier mobility, and carrier concentration of the films are determined as 3.722 Ω m, 0.

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Section: B-217supporting

confidence: 92%

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

2015

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“…A variety of approaches have been proposed for silicon-based light-emitting structures. The quantum confinement of carriers in nanostructured silicon systems and deposition of semiconductor NCs on a Si substrate are interesting research areas [16,17,29]. Figure 7(a) shows the PL spectra for the Si(1 0 0) substrate and PbS nanostructured thin films on a Si(1 0 0) substrate at an excitation wavelength of 335 nm.…”

Section: Photoluminescencementioning

confidence: 99%

“…Kaci et al [16] observed an intense broad emission band for PbS film on silicon substrate deposited in a 90-min deposition time. The broad emission peaks were at 367, 386, 411, 448, 475 and 533 nm with 230 nm excitation wavelength.…”

Section: Photoluminescencementioning

confidence: 99%

“…Pawar et al [14] have reported on the PL of NC-PbS thin film deposited on soda lime glass substrate using CBD in which they used tri-sodium citrate in addition to the principal material (lead acetate, sodium hydroxide and thiourea). Kaci et al [15,16] investigated the effect of polyethylene glycol 300, polyethylene oxide and isopropyl alcohol on the PL properties of PbS thin film grown on Corning glass and Si(1 0 0) substrates. Ullrich et al [17] studied the PL spectra of PbS QD deposited on a GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

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Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

Tohidi

Jamshidi‐Ghaleh

2014

Philosophical Magazine

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PbS nanocrystalline thin film was prepared by chemical bath deposition on Si (1 0 0) substrate at bath temperatures of 25, 45 and 65°C. Triethanolamine was added to the aqueous solution, which decreased the grain size and increased the luminescence of the nanocrystalline PbS thin film. PbS nanocrystals were identified using XRD, TEM and AFM. The crystalline size of the PbS film deposited at different bath temperatures was estimated by XRD and TEM to be 7-12 nm. The growth mechanism of the PbS crystallites were described at different bath temperatures. The confinement was reflected in the absorption spectra, photoluminescence excitation and photoluminescence spectra. The luminescence of Si(1 0 0) substrate and PbS nanocrystalline film deposited on Si(1 0 0) were compared, and the results revealed that the PbS nanocrystals altered and notably enhanced the emission features of the Si(1 0 0) substrate. The shifting of the maximum photoluminescence emission wavelength of PbS nanocrystals with a change in bath temperature and the variation in photoluminescent intensity of PbS nanocrystals prepared at 25°C versus deposition time were investigated. A single-peak fit of a Gaussian function was employed to discern the photoluminescence of PbS on Si(1 0 0) substrate.

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“…These attributes are all determined by morphology, surface properties, crystal defects, phase and size, which rely completely on their synthetic methods. PbS nanostructures have been prepared using different methods such as chemical deposition [9], hydrothermal [10], microwave/sonochemical [11], thermal decomposition [12] and sol-gel [13]. Many researchers have investigated the ferroelectric, dielectric and electrical properties of PbS formed by various synthetic techniques.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study

et al. 2020

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This communication reports the synthesis of bis(diisobutyldithiophosphinato)lead(II) complex and its subsequent application as a single source precursor for the nanostructured deposition of lead sulphide semiconductors and its impedance to explore its scope in the field of electronics. Synthesized complex was characterized by microelemental analysis, nuclear magnetic resonance spectroscopy, infrared spectroscopy and thermogravimetric analysis. This complex was decomposed using the aerosol-assisted chemical vapour deposition technique at different temperatures to grow PbS nanostructures on glass substrates. These nanostructures were analyzed by XRD, SEM, TEM and EDX methods. Impedance spectroscopic measurements were performed for PbS in the frequency range of 40 to 6 MHz at room temperature. In a complex impedance plane plot, two relaxation processes were exhibited due to grains and grain boundaries contribution. A high value of dielectric constant was observed at low frequencies, which was explained on the basis of Koops phenomenological model and Maxwell–Wagner type polarization. Frequency-dependent AC conductivity results were compliant with Jonscher power law, while capacitance–voltage loop had a butterfly shape. These impedance spectroscopic results have corroborated the ferroelectric nature of the resultant PbS nanodeposition.

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Preparation and room temperature photoluminescence characterization of PbS/Si(100) thin films

Cited by 17 publications

References 42 publications

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

Preparation and Characterization of Nanocrystalline PbS Thin Films Produced by Chemical Bath Deposition

Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study

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