Preparation and second-order nonlinear optical properties of CuCl nanocrystal-doped glass films

Sasai, Jun; Tanaka, Katsuhisa; Hirao, Kazuyuki

doi:10.1016/s1359-6462(01)00853-3

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…Over the past decade or so, research on the cuprous halides has focussed on three main areas: (1) Spectroscopic and theoretical studies of band structures and excitonic-based luminescence in CuCl, CuBr and copper halide-mixed crystals [5][6][7], (2) fundamental photoluminescence (PL) and spectroscopic studies of CuCl quantum dots embedded in NaCl crystals [8,9] and glass matrices [10,11], (3) surface studies of the growth mechanisms involved in the heteroepitaxy of CuCl single crystals on a number of substrates such as MgO (0 0 1) and CaF 2 (1 1 1) [12], reconstructed (0 0 0 1) haematite (a-Fe 2 O 3 ) [13] and both Si and GaAs [14]. We have previously demonstrated a simple electroluminescent device (ELD) structure based on the deposition of CuCl on Si [15].…”

Section: Introductionmentioning

confidence: 99%

Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping

O'Reilly

Mitra

Natarajan

et al. 2006

Journal of Crystal Growth

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g-CuCl is a wide-band gap (E g ¼ 3:395 eV at 4 K), direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, a CuCl ¼ 0:541 nm means that the lattice mismatch to Si (a Si ¼ 0:543 nm) is o0.5%.g-CuCl on Si-the growth of a wide-band gap, direct band gap, optoelectronics material on silicon substrate is a novel material system, with compatibility to current Si-based electronic/optoelectronics technologies. Both n-type and p-type CuCl will be required for development of homojunction light-emitting diodes (LEDs). The authors report on the impact of incorporation of Zn for n-type doping of CuCl by co-evaporation of CuCl and ZnCl 2 .Polycrystalline Zn-doped g-CuCl thin films are grown on Si (1 1 1), Si (1 0 0), and glass substrates by physical vapour deposition. X-ray diffraction (XRD) studies confirm that this n-doped CuCl has a cubic zincblende structure with a preferred (1 1 1) orientation. Several excitonic bands are evident in low-temperature photoluminescence (PL) measurements such as the Z 3 free exciton at $388 nm; I 1 -bound exciton at $392 nm and M free biexciton at $393 nm. Cathodoluminescence (CL) and PL reveal a strong room temperature Z 3 excitonic emission at $385 nm. Electrical measurements indicate n-type conductivity with resistivity $34 Ocm. r

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Section: Introductionmentioning

confidence: 99%

Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping

O'Reilly

Mitra

Natarajan

et al. 2006

Journal of Crystal Growth

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“…Excitonic properties of copper halides have attracted much attention, as the exciton binding energies (190 meV for CuCl and 108 meV for CuBr) are much larger than those for III-V and II-VI semiconductors 8 . Over the past decade or so, research on the cuprous halides has focussed on three main areas: (1) Spectroscopic and theoretical studies of band structures and excitonic-based luminescence in CuCl, CuBr and copper halide mixed crystals 8-10 , (2) Fundamental photoluminescence and spectroscopic studies of CuCl quantum dots embedded in NaCl crystals 11,12 and glass matrices 13,14 , (3) Surface studies of the growth mechanisms involved in the heteroepitaxy of CuCl single crystals on a number of substrates such as MgO (001) and CaF 2 (111) 15 and reconstructed (0001) haematite (α-Fe 2 O 3 ) 16 . One group of researchers has examined the surface growth mechanisms in the heteroepitaxy of single crystalline films of CuCl on both Si and GaAs substrates by molecular beam epitaxy 17 .…”

Section: Introductionmentioning

confidence: 99%

The use of wide-bandgap CuCl on silicon for ultra-violet photonics

et al. 2005

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γ-CuCl is a wide-bandgap (E g = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, a CuCl = 0.541 nm, means that the lattice mismatch to Si (a Si = 0.543 nm) is <0.5%. γ-CuCl on Si -the growth of a wide-bandgap, direct bandgap, optoelectronics material on silicon substrates is a novel material system, with compatibility to current Si based electronic/optoelectronics technologies. The authors report on early investigations consisting of the growth of polycrystalline, CuCl thin films on Si (100), Si (111), and quartz substrates by physical vapour deposition. X-ray diffraction (XRD) studies indicate that CuCl grows preferentially in the <111> direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z 3 excitonic emission at ~387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ~380nm and ~387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at ~360nm.

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“…18 These exciton peak positions are in a very good agreement with the previous reports. 19,20 The sample deposited at 3 cm target to substrate distance does not reveal any excitonic feature but shows strong absorbance below 400 nm. This is the characteristic absorbance region (280 to 360 nm) for CuCl 2 21 and a good indication of the presence of the CuCl 2 phase in this sample.…”

Section: Intensity Cps)mentioning

confidence: 99%

Structural and optoelectronic properties of sputtered copper (I) chloride

et al. 2005

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Copper (I) Chloride is a wide band gap semiconductor with great potential for silicon-based optoelectronics due to the fact that is closely lattice matched with silicon. This work examines the deposition of CuCl thin films by magnetron sputtering on silicon and glass substrates. Film structural and morphological properties are studied with X-ray diffraction and atomic force microscopy. Optical absorbance and luminescence spectra of CuCl thin films are analysed in order to study the excitonic features. The influence of deposition process parameters and post annealing on the film properties are also reported.

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Preparation and second-order nonlinear optical properties of CuCl nanocrystal-doped glass films

Cited by 8 publications

References 4 publications

Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping

Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping

The use of wide-bandgap CuCl on silicon for ultra-violet photonics

Structural and optoelectronic properties of sputtered copper (I) chloride

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