Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Mia, M.N.H.; Rana, Sardar Masud; Pervez, M. F.; Rahman, M. Reefaz; Hossain, Khalid; Mortuza, Abdul Al; Basher, Mohammad Khairul; Hoq, Mahbubul

doi:10.1515/msp-2017-0066

Cited by 15 publications

(10 citation statements)

References 37 publications

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“…Generally, ZnO thin films fabricated by sol–gel, [ 47 ] spray pyrolysis, [ 48 ] and RF magnetron sputtering [ 49 ] demonstrate a high percentage of (002) peak, which is not applicable for the vertical growth of (Sb 4 Se 6 ) n ribbons. However, highly nonpolar, (110) oriented ZnO thin films can be achieved by the low‐pressure chemical vapor deposition (LPCVD) technique at a suitable temperature.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Cao

Qü

Wang

et al. 2022

Advanced Optical Materials

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Antimony selenide (Sb2Se3) has garnered significant attention with its extraordinary optical and optoelectronic properties for optical and optoelectronic devices such as broadband photodetectors. The trends emerge in the synthesis of Sb2Se3 over a semiconducting substrate for the direct formation of heterostructures, which facilitate a pn junction for self‐powered photodetector. 1D Sb2Se3 nanorods are preferred to boost the charge carrier transport along the longitudinal direction as well as the optical absorption by light trapping. Great challenges remain for the vertical growth of nanorods. In this work, the precisely vertical alignment of Sb2Se3 nanorod arrays has been achieved in an epitaxial growth manner by selecting a lattice‐matching substrate, namely, boron‐doped ZnO (110) surface. The directly grown boron‐doped ZnO/Sb2Se3 nanorod arrays heterostructure leads to a high‐performance broadband photodetector. Eventually, the device demonstrates extraordinary figure‐of‐merit parameters, i.e., responsivity, on/off ratio, and specific detectivity. Furthermore, device simulation predicts the theoretical limit of the photodetector performances on the condition of suppressed defect density of the Sb2Se3. These results may shed light on the investigation of controlled growth of low‐dimensional materials, self‐powered photodetectors, and related optic and optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Cao

Qü

Wang

et al. 2022

Advanced Optical Materials

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“…There are a few studies on Sb doping ZnO thin films have been carried out, including [16] with variations in doping concentration, the result shows that ZnO semiconductors is n-type without doping and becomes p-type after doping with 0.2% of Sb. According to another work [17], with variations of thickness of thin film, demonstrating that the energy band gap gets smaller as the thickness layer increases. According to [18], the variations of the ZnO thickness is an increase in the thickness of the ZnO thin film layer as the crystal size increases and the band gap energy decreases.…”

Section: Introductionmentioning

confidence: 89%

“…4 demonstrates the thickness of Sb doping ZnO thin film had no effect on the energy band gap value, as this value is only affected by the material employed. The bandgap energy degrades as the thickness of the thin film layer increases [17,18]. Variations of ZnO thickness result in increasing thickness as the energy band gap decreases.…”

Section: Crystal Structure Analysismentioning

confidence: 99%

Preparation of Sb doping ZnO: optical and structural evaluation on Variations Layer Thickness

Siregar¹,

Siregar²,

Sirait³

2023

Proceedings of the 4th International Conference on Science and Technology Applications, ICoSTA 2022, 1-2 November 2022, Medan,

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By a sol-gel followed with spin coating technique, Sb doping thin films with varying coating thicknesses have been successfully synthesized. Crystal size determined by XRD analysis of Sb doping ZnO thin films with coating thickness variations ranging from 17.77 nm to 27.98 nm and a hexagonal wurtize-shaped crystal structure. The SEM analysis revealed that the thickness of the Sb doping ZnO thin films varied between 6.5 and 10.4 µm. The surface of Sb doping ZnO thin films reveals that the layer thickness increases as the crystallite grains appear round, nearly uniform, and dense, and there are almost no visible pores. UV-Vis analysis revealed that the transmittance value of all Sb doping ZnO thin films was greater than 80%. The energy band gap for all samples was 3.20 eV, and the thickness of Sb doping ZnO thin film had no effect on the energy band gap value.

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“…However, as studies show [24][25][26], nanosized zinc oxide, namely 1D-structures, dramatically change in properties compared to their bulk analogs [27]. Compared to films, ZnO NWs have a number of advantages.…”

Section: Literature Review and Problem Statementmentioning

confidence: 99%

ZnO nanowires for photoelectric converter applications

Кидалов

Sosnytska

Dyadenchuk

et al. 2021

ijmph

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This work is focused on the creation and study of photosensitive structures based on zinc oxide nanofibers, which are promising for solar energy. Zinc oxide nanowires were obtained on the porous zinc selenide surface. The porous substrate was obtained by electrochemical etching of a low-resistance n-ZnSe plate (110) with a polished surface. Nanowires were deposited by radical-beam epitaxy. The annealing temperature was varied from 400°C to 500°C. The oxygen radical flux was 1.5•10 17 cm -2 s -1 . The process duration was 50 minutes. According to the scanning electron microscopy results, the nanowires length reaches 10 μm, the nanowires diameter is ~1 μm. The predominant X-ray diffraction reflex at 2θ=34.44° indicates the polycrystalline nature of the manufactured ZnO coatings with a wurtzite-type hexagonal lattice. The study of nanowires ZnO luminescence at room temperature contains an ultraviolet peak around 385 nm. This peak is related to the zinc oxide edge luminescence. Based on the fabricated structure, the design of the photoconverter was developed. The upper contact of the fabricated photoelectric converter was created by vacuum thermal sputtering of aluminum through a mask. The deposition was carried out at a substrate temperature of 200° C. Ohmic contacts were made using conductive silver paste. The reverse ohmic contact was formed by applying Al paste to the entire reverse side of the surface. The upper layer of the structure is an array of ZnO nanowires. The active base layer is ZnSe. The light volt-ampere characteristics of the obtained structure were measured in the AM 1.5 illumination mode. No-load voltage Uxx, short-circuit current Isc and the fill factor of the current-voltage characteristic FF of the solar element were measured. The efficiency of the manufactured photoconverter was 13.7 %.

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Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Cited by 15 publications

References 37 publications

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Preparation of Sb doping ZnO: optical and structural evaluation on Variations Layer Thickness

ZnO nanowires for photoelectric converter applications

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