The paper is devoted to the growth of thin SiC films by the method of substitution of atoms on macro-and mesoporous substrates of p-and n-type silicon of (100) orientation. On the mesoporous Si (100) substrates polycrystalline 3C-SiC films were formed, the crystallite size determined from XRD patterns was 27.5 nm. The obtained structures are studied by the methods of scanning electron and atomic-force microscopy, micro-Raman spectroscopy and X-ray diffraction analysis.

In the present work, ZnO films were obtained on mesoporous silicon substrates by the method of HF magnetron sputtering of a metallic zinc target in reaction oxygen and argon gas medium. The properties of the ZnO films obtained on mesoporous substrates were studied depending on the ratio of the partial pressures of the working gases (argon/oxygen). X-ray analysis showed that in the process of deposition, the ZnO films of a hexagonal structure were formed. The effect of the porous layer on the structural and luminescent properties of the thin ZnO films was studied.The results showed that the porous silicon substrate reduces residual stresses and can be used for obtaining high-quality ZnO films.

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