The paper is devoted to the growth of thin SiC films by the method of substitution of atoms on macro-and mesoporous substrates of p-and n-type silicon of (100) orientation. On the mesoporous Si (100) substrates polycrystalline 3C-SiC films were formed, the crystallite size determined from XRD patterns was 27.5 nm. The obtained structures are studied by the methods of scanning electron and atomic-force microscopy, micro-Raman spectroscopy and X-ray diffraction analysis.

The samples of porous InP were grown up by a method of anode etching on a substrate (100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Size of walls between pores which makes 3 - 11nm.

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