The samples of porous InP were grown up by a method of anode etching on a substrate (100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Size of walls between pores which makes 3 - 11nm.

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PACS 61.10. Kw, 78.55.Cr, 78.55.Mb, 79.60.Dp With the help of nitridation of porous GaAs(001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaAs substrate. XPS spectra were used to investigate the chemical composition of porous GaAs substrates, obtained by electrochemical etching. Porous GaAs substrate at first was annealed in a H 2 flow at a temperature of 550 °C (with the aim of removing oxygen from the surface of the porous GaAs). Then, the porous GaAs substrate was annealed in atomic nitrogen at a temperature of 400 °C, and then annealed in vacuum at 600 °C. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaAs substrate has no tensile strain.