Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition

Abstract

Resistive switching random access memory is one of the novel nonvolatile memory technologies that, has a promising future for replacing the conventional FLASH memory. In this work a detailed study made about the types of operations and understanding the mechanisms of the resistance changing in the device. SnO 2 thin films are deposited by using Thermal Vacuum Evaporation deposition method at room temperature on Al/glass substrate to produce Al/SnO 2 /Al/glass device structure. Optical properties are taken to measure the optical band gap of SnO 2. Resistive switching is observed by taking current voltage readings at room temperature. RRAM cell showed unipolar resistive switching behavior with no overlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high and low resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratio between HRS to LRS has been found to be at least (41) within 21 cycles.