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Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

The inrush current is a highly asymmetric transient magnetizing current resulting from saturation of the core of the transformer caused by excessive growth of magnetic flux in one direction only. The suggested strategy to damp the inrush current is adding an inductor in parallel with the circuit breaker (C.B., which has a very low resistance when it is closed) at different values of the adding inductor to determine the suitable values of the inductor to damp the probable inrush current. This strategy differs from other strategies because the damping inductor is connected in parallel with the C.B. only at closing the C.B. for a few cycles, The damping inductor prevents the excessive growth for the flux in the core of the CT which lead to saturating the core of CT and then, prevents the excessive growth for the inrush current for specific situations of switching. Finally, the MATLAB program is used to simulate the suggesting strategy.

Resistive switching random access memory is one of the novel nonvolatile memory technologies that, has a promising future for replacing the conventional FLASH memory. In this work a detailed study made about the types of operations and understanding the mechanisms of the resistance changing in the device. SnO 2 thin films are deposited by using Thermal Vacuum Evaporation deposition method at room temperature on Al/glass substrate to produce Al/SnO 2 /Al/glass device structure. Optical properties are taken to measure the optical band gap of SnO 2. Resistive switching is observed by taking current voltage readings at room temperature. RRAM cell showed unipolar resistive switching behavior with no overlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high and low resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratio between HRS to LRS has been found to be at least (41) within 21 cycles.