Preparation and temperature-dependent photoelectrical properties of VO2/AZO heterojunctions

Pei, Jian; Li, Yang; Huang, Yaqin; Li, Zhengpeng; Tian, Rong; Liu, Jin; Zhou, Ji; Fang, Baoying; Wang, Xiaohua; Han, Xiaoyan

doi:10.1016/j.rinp.2018.11.042

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…Dashtian et al successfully synthesized a new visible lightdriven nanoscale VO 2 /CuWO 4 nn heterojunction photocatalyst, exhibiting significant catalytic activity for the simultaneous photodegradation of sky blue II (AZII) and auramine O (AO) dye [13]. Pei et al grew VO 2 film on AZO substrate to form VO 2 /AZO nn heterojunction, which revealed an obvious thermal hysteresis effect and excellent rectification characteristics at high and low temperatures [14]. Muraoka et al produced VO 2 /Nb:TiO 2 heterojunction to investigate its resistance-temperature characteristics and photoconductivity under different illumination conditions [15].…”

Section: Introductionmentioning

confidence: 99%

Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties

Zhou

Tian

et al. 2020

J. Phys. D: Appl. Phys.

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In this investigation, high-quality VO2 films were prepared on p-GaAs wafers by DC magnetron sputtering and post-annealing process. The results indicate that the optimum annealing temperature and time of the sample are 2 h and 420 °C with the excellent rectification characteristics originated from the n-VO2/p-GaAs interface before the occurrence of semiconductor-to-metal phase transition in VO2, which can be explained by the thermal electron emission model. The device’s threshold voltage at 30 °C and 60 °C corresponds to 7.5 and 6 V. The responsivity of the as-fabricated photon detector under 980 and 1310 nm laser illumination was 0.013 and 0.022 A W−1 at an applied bias of 3 V as well as 0.0025 and 0.0048 A W−1 at zero bias, respectively. The NIR transmittance decreases with increasing voltage and temperature due to the combination of voltage and temperature to induce VO2 phase transition. The results will be beneficial to explore and improve the IR photon detector based on VO2 and provide ideas for new optoelectronic devices with phase transition characteristics.

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Section: Introductionmentioning

confidence: 99%

Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties

Zhou

Tian

et al. 2020

J. Phys. D: Appl. Phys.

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Thermochromic performances and structure controlling of self-assembled novel SiO2@CQDs/VO2(M) powders

Cheng

Fang

et al. 2022

J Sol-Gel Sci Technol

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Highly transparent ultrathin vanadium dioxide films with temperature-dependent infrared reflectance for smart windows

Jung

Yun

Slusar

et al. 2022

Applied Surface Science

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Preparation and temperature-dependent photoelectrical properties of VO2/AZO heterojunctions

Cited by 6 publications

References 15 publications

Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties

Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties

Thermochromic performances and structure controlling of self-assembled novel SiO2@CQDs/VO2(M) powders

Highly transparent ultrathin vanadium dioxide films with temperature-dependent infrared reflectance for smart windows

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Preparation and temperature-dependent photoelectrical properties of VO2/AZO heterojunctions

Cited by 6 publications

References 15 publications

Electrical and infrared responses of n-VO2/p-GaAs heterojunctions based on VO2 phase transition properties

Electrical and infrared responses of n-VO2/p-GaAs heterojunctions based on VO2 phase transition properties

Thermochromic performances and structure controlling of self-assembled novel SiO2@CQDs/VO2(M) powders

Highly transparent ultrathin vanadium dioxide films with temperature-dependent infrared reflectance for smart windows

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Product

Resources

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Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties

Electrical and infrared responses of n-VO₂/p-GaAs heterojunctions based on VO₂ phase transition properties