Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering

Liu, Yantao; Ren, Wei; Shi, Peng; Liú, Dan; Liu, Ming; Jing, Weixuan; Tian, Bian; Ye, Zuo‐Guang; Jiang, Zhuangde

doi:10.1063/1.4999246

Cited by 30 publications

(13 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Various deposition techniques have been used to obtain TCO thin films, such as: vacuum thermal evaporation [15–16], chemical vapor deposition [17], sol–gel [18], pyrolysis spray techniques [5,19], magnetron sputtering [20–22], and pulsed laser deposition (PLD) [23].…”

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

show abstract

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Prepelita¹,

Stavarache²,

Crǎciun³

et al. 2019

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…Finally, the fabricated TFTCs were pasted with copper wires at the cold end using silver paste, and then heated at 200 °C for 1 h to make the bonds strong. The output voltages of the TFTCs were measured by a lab-made testing measurement system, similar to our previous work [ 20 ]. A muffle furnace (LHT 02/17/P310, Nabertherm, Lilienthal, Germany) was used to provide various temperature differences.…”

Section: Experimental Sectionsmentioning

confidence: 99%

Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

et al. 2021

Self Cite

View full text Add to dashboard Cite

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

show abstract

“…Compared to carbide and silicide thin film thermocouples, oxide ceramic TFTCs have more potential for high temperature stability and thermoelectric voltage output. Indium tin oxide (ITO) as a prevalent conductive oxide has been applied to TFTCs [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on the Thermoelectricity Properties of the WRe26-In2O3 Thin Film Thermocouples

et al. 2020

Self Cite

View full text Add to dashboard Cite

WRe26-In2O3 (WRe26 (tungsten-26% rhenium) and In2O3 thermoelectric materials) thin film thermocouples (TFTCs) have been fabricated based on magnetron sputtering technology, which can be used in temperature measurement. Many annealing processes were studied to promote the sensitivity of WRe26-In2O3 TFTCs. The optimal annealing process of the thermocouple under this kind of RF magnetron sputtering method was proposed after analyzing the properties of In2O3 films and the thermoelectric voltage of TFTCs at different annealing processes. The calibration results showed that the WRe26-In2O3 TFTCs achieved a thermoelectric voltage of 123.6 mV at a temperature difference of 612.9 K, with a sensitivity of up to 201.6 µV/K. Also, TFTC kept a stable thermoelectric voltage output at 973 K for 20 min and at 773 K for two hours. In general, the WRe26-In2O3 TFTCs developed in this work have great potential for practical applications. In future work, we will focus on the thermoelectric stability of TFTCs at higher temperatures.

show abstract

Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering

Cited by 30 publications

References 21 publications

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Effect of Annealing on the Thermoelectricity Properties of the WRe26-In2O3 Thin Film Thermocouples

Contact Info

Product

Resources

About