Preparation and thermoelectric characteristics of ITO/Pt thin film thermocouples on Ni-based superalloy substrate

Zhao, Xiaohui; Li, Haitao; Chen, Yin-Zhi; Jiang, Hongchuan

doi:10.1016/j.vacuum.2016.11.034

Cited by 15 publications

(10 citation statements)

References 22 publications

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“…Such interactions are closely dependent on temperature. For non-degenerate semiconductor materials, the Seebeck coefficient is given in Equation (1):

where S is the Seebeck coefficient, N D is the carrier concentration, A is the transport constant, k is the Boltzmann constant, e is the electron charge,

is the effective mass, and

is Planck’s constant [ 19 ]. In a low temperature range, the interactions between phonons and electrons play a major role.…”

Section: Resultsmentioning

confidence: 99%

“…The coefficients of the polynomial are shown in Table 1 , and all R 2 of the values are more than 0.999. The Seebeck coefficient of the thermocouple can be obtained by Equation (3):

where S is the Seebeck coefficient, Δ T is temperature difference between the hot junction and the cold junction, Δ V is the voltage difference between the ITO and In 2 O 3 materials, and

and

is the thermoelectric voltage for the ITO and In 2 O 3 films, respectively [ 19 , 20 , 21 ]. The overall Seebeck coefficients are 39.6 µV/°C (without glass additives) and 44.5 µV/°C (with 8 wt % glass additives).…”

Section: Resultsmentioning

confidence: 99%

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A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

Liu

Ren

Shi

et al. 2018

Sensors

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An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

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“…Such interactions are closely dependent on temperature. For non-degenerate semiconductor materials, the Seebeck coefficient is given in Equation (1):

where S is the Seebeck coefficient, N D is the carrier concentration, A is the transport constant, k is the Boltzmann constant, e is the electron charge,

is the effective mass, and

is Planck’s constant [ 19 ]. In a low temperature range, the interactions between phonons and electrons play a major role.…”

Section: Resultsmentioning

confidence: 99%

“…The coefficients of the polynomial are shown in Table 1 , and all R 2 of the values are more than 0.999. The Seebeck coefficient of the thermocouple can be obtained by Equation (3):

where S is the Seebeck coefficient, Δ T is temperature difference between the hot junction and the cold junction, Δ V is the voltage difference between the ITO and In 2 O 3 materials, and

and

Section: Resultsmentioning

confidence: 99%

A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

Liu

Ren

Shi

et al. 2018

Sensors

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“…Usually, the physical vapor deposition (PVD) techniques, including magnetron sputtering, vacuum evaporation, electron beam evaporation, etc., are conducted to prepare a Pt film due to their advantages of high purity, high uniformity, thin film thickness, and excellent adhesion strength. − For example, Gräbner et al integrated a nanogranular Pt (NG-PT) strain gauge into an elastic gasket via the focused ion beam-induced deposition technology (FIBID), by which the local strain could be measured with high sensitivity. Zhao et al . prepared ITO-Pt thin film thermocouples on nickel-based superalloy by radiofrequency (RF) magnetron sputtering with a mask, which shows excellent stability during thermal cycling from room temperature to 1100 °C after annealing at 1000 °C with the assistance of a dense Al 2 O 3 antioxidation layer.…”

Section: Introductionmentioning

confidence: 99%

Studies on the Platinum Thick Film Sensor Conformally Written by Laser Micro-Cladding: Formability, Microstructure, and Performance

Wang

Ouyang

et al. 2023

ACS Appl. Mater. Interfaces

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In this paper, laser micro-cladding technology (LMC) was conducted to prepare high-temperature Pt thick film sensors in situ. The formability, microstructure, sintering mechanism, and electrical properties of the LMCed Pt thick films were first studied systematically. Results indicated that with the increase of laser power density, the sintering degree of the Pt thick film increased obviously, improving its adhesion strength and reducing its resistivity. However, when the laser power density exceeded the threshold, holes or grooves were formed in the Pt film, leading to the degeneration of its properties. A Pt thick film with good adhesion strength, excellent conductive networks, and the minimum resistivity (46 ± 2 μΩ•cm) was obtained at a laser power density of 1.37 × 10 6 W•cm −2 . Then, Pt thick film temperature sensors (including Pt thermal resistance temperature (RTD) and Pt−Pt10%Rh thermocouple sensors) were conformally prepared by LMC. Their temperature-sensing performance became stable after the initial high-temperature calibration, with a linearity of 0.9985 for the RTD with a TCR of 2.46 × 10 −3 /°C (at 920 °C) and a linearity of 0.9905 for the thermocouple with a Seebeck coefficient of 9.7 μV/°C, both of which are better than that made by direct DC magnetron sputtering deposition. Therefore, this work provides a novel feasible way to conformally integrate high-performance Pt film sensors in situ.

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“…Therefore, some metal-oxide TFTCs are developed. Platinum (Pt) is a refractory precious metal with a low Seebeck coefficient and higher oxidation resistance, which can be used as a leg of TFTCs, such as Pt-ITO, Pt-ITON and Pt-In 2 O 3 TFTCs [ 18 , 19 , 20 ]. During the heating cycle of 25–1200 °C, the Pt-ITO showed good stability; its Seebeck coefficient was up to 65.39 μV/°C [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on the Thermoelectricity Properties of the WRe26-In2O3 Thin Film Thermocouples

et al. 2020

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WRe26-In2O3 (WRe26 (tungsten-26% rhenium) and In2O3 thermoelectric materials) thin film thermocouples (TFTCs) have been fabricated based on magnetron sputtering technology, which can be used in temperature measurement. Many annealing processes were studied to promote the sensitivity of WRe26-In2O3 TFTCs. The optimal annealing process of the thermocouple under this kind of RF magnetron sputtering method was proposed after analyzing the properties of In2O3 films and the thermoelectric voltage of TFTCs at different annealing processes. The calibration results showed that the WRe26-In2O3 TFTCs achieved a thermoelectric voltage of 123.6 mV at a temperature difference of 612.9 K, with a sensitivity of up to 201.6 µV/K. Also, TFTC kept a stable thermoelectric voltage output at 973 K for 20 min and at 773 K for two hours. In general, the WRe26-In2O3 TFTCs developed in this work have great potential for practical applications. In future work, we will focus on the thermoelectric stability of TFTCs at higher temperatures.

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Preparation and thermoelectric characteristics of ITO/Pt thin film thermocouples on Ni-based superalloy substrate

Cited by 15 publications

References 22 publications

A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

Studies on the Platinum Thick Film Sensor Conformally Written by Laser Micro-Cladding: Formability, Microstructure, and Performance

Effect of Annealing on the Thermoelectricity Properties of the WRe26-In2O3 Thin Film Thermocouples

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