Preparation, characterization and study of optical properties of ZnS nanophosphor

Manam, J.; Chatterjee, Vani Vardhan; Das, Subrata; Choubey, A.; Sharma, S.K.

doi:10.1016/j.jlumin.2009.09.005

Cited by 45 publications

(12 citation statements)

References 30 publications

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“…It can be clearly seen that the weak and broad emission spectra from pure ZnS are mainly located in the blue region with its maximum intensity centered at 420 nm, which might be attributed to interstitial zinc. 20 Compared to the PL spectrum of the pure ZnS, the emission peak of the as-obtained ZnS/CdS composites exhibited an obvious blue shift and its intensity also had a large enhancement. This large enhancement in the emission is due to the fact that the CdS material suppresses the tunneling of the charge carriers from ZnS to the surface atoms of the CdS nanoparticles, resulting in more photogenerated electrons and holes confined inside the ZnS microstructure.…”

Section: Optical and Photoluminescence Properties Of Zns/cdsmentioning

confidence: 89%

Hydrothermal synthesis and optical property of ZnS/CdS composites

et al. 2013

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ZnS/CdS semiconductor composites were synthesized successfully by combining a hydrothermal route with a homogeneous precipitation process. The as-prepared products were characterized by x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectrometer. The results showed that the as-prepared products were composed of ZnS microspheres with a facecentered cubic phase and CdS nanoparticles with hexagonal phase, CdS nanoparticles were found to be assembled on the surfaces of the cubic ZnS microspheres. In addition, the ultraviolet-visible absorption spectroscopy and the room temperature photoluminescence (PL) spectroscopy of the ZnS microspheres and ZnS/CdS composites were also investigated. The PL testing indicated that the emission peak of as-prepared ZnS/CdS composites not only exhibited an obvious blue shift but also its intensity had a large enhancement compared to the pure ZnS microspheres. Furthermore, the photocatalytic degradation test showed that the as-prepared ZnS/CdS composites showed excellent photocatalytic degradation activity for methyl orange under UV irradiation. This enhanced activity may be related to the modification of CdS nanoparticles on the surfaces of ZnS microspheres.

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Section: Optical and Photoluminescence Properties Of Zns/cdsmentioning

confidence: 89%

Hydrothermal synthesis and optical property of ZnS/CdS composites

et al. 2013

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“…To produce 1 mcd cm −2 with the thinner device in this study requires 15% less voltage, increasing the attractiveness in low intensity applications where the requirements for higher applied voltages are often a significant hindrance. To produce ZnS : Cu,Cl AC EL devices that utilize the field enhancement from CuS precipitates thinner than 10 µm, a fabrication approach from colloidal nanoparticles [15] will probably be more successful.…”

Section: Discussionmentioning

confidence: 99%

Understanding and improving electroluminescence in mill-ground ZnS : Cu,Cl phosphors

Medling

Balaban

Kozina

et al. 2011

J. Phys. D: Appl. Phys.

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We demonstrate that lightly milled ZnS : Cu,Cl phosphors produce AC electroluminescence (EL) emission in devices half as thick and produce up to 5 times the light output as the thinnest devices made with unground phosphors. We also establish minimum and maximum bounds on micro-milling conditions for producing powders that are still viable for AC EL. To understand the cause of the minimum size, we report extended x-ray absorption fine structure (EXAFS) measurements on phosphors sorted by particle size. The EXAFS data show that grinding preferentially damages the initially embedded CuS nano-precipitate. This suggests that grinding cleaves the ZnS : Cu through the embedded CuS nano-precipitates, leaving the CuS nano-precipitates on the surface to be further broken apart by continued grinding, eventually reducing the effectiveness of the CuS-induced electric field enhancement.

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“…The emission around 420nm may be due to the interstitial zinc [44,45]. On recombination of electrons from the sulphur vacancies with the holes in the valance band, PL emission at 452nm is originated [44,46]. The less intense peak around 480 nm can be attributed to the zinc vacancy related emission [47].…”

Section: Photoluminescencementioning

confidence: 99%

“…The first emission peak at 397 nm may be due to the excitonic recombination of the ZnS lattice. The emission around 420nm may be due to the interstitial zinc [44,45]. On recombination of electrons from the sulphur vacancies with the holes in the valance band, PL emission at 452nm is originated [44,46].…”

Section: Photoluminescencementioning

confidence: 99%