Preparation-dependent Co/Si(100) (2×1) interface growth: Spontaneous silicide formation versus interstitial-site mechanism

Meyerheim, H. L.; Döbler, U.; Puschmann, A.

doi:10.1103/physrevb.44.5738

Cited by 50 publications

(38 citation statements)

References 12 publications

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“…2a (0.1-1.3 ML), the Co atoms were assumed to be adsorbed on top of the Si surface and to occupy sites in the (100) Si layers, exclusively. The latter follows the results of Meyerheim et al [9], indicating that at low Co coverage the Co atoms take tetrahedral interstitial sites in the Si lattice and four-fold hollow sites in the first Si layer, which all are allocated on (100) Si planes. We would like to note that we can exclude the growth of islands during Co deposition: from an Auger study, Gallego et al [16] derived layer-by-layer growth of Co with some Si intermixed during deposition at room temperature.…”

Section: Resultssupporting

confidence: 73%

“…It should be noted that this result is different from results for Co growth on Si(100) at room temperature by our group [13] (see also Fig. 2c) and by Meyerheim et al [9], where only an incorporation of Co in the top-most Si layer was observed. The next layer, layer '0' in Fig.…”

Section: Resultscontrasting

confidence: 54%

“…As understood from the growth of Co on Si(100) at room temperature, diffused-in Co atoms occupying the tetrahedral interstitial sites are the main cause for the weakening of Si-Si bonds [9][10][11][12][13][14][15][16]. These weakened bonds allow Si atoms to diffuse out to the surface and form silicide-like phases.…”

Section: Introductionmentioning

confidence: 99%

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Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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Highly resolved Co depth profiles have been obtained during the initial stages of Co growth on Si(100) at low temperature (−60 • C) by in situ high-resolution Rutherford backscattering spectrometry. We found extensive Co in-diffusion in the submonolayer growth regime even at this low temperature, besides Co on top of the Si surface. The amount of diffused-in Co is larger than the amount of Co at the Si surface. Every second Si layer is depleted of Co, starting at the Si surface, thus giving rise to compositional oscillations of Co in the Si(100) lattice. At this low temperature the growth of metallic Co on the Si surface is observed at 0.1 ML of deposited Co, which continues for higher coverages. At much higher coverage (5.93 ML of Co) almost exclusively low Co content silicides are formed at the Co/Si interface. The data presented here are compared with previous room temperature deposition data and are different in several aspects.PACS 68.55.ag; 82.80.Yc

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Section: Resultssupporting

confidence: 73%

Section: Resultscontrasting

confidence: 54%

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Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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“…Even if our experimental results cannot totally exclude Co diffusion into the Si subsurface, we have associated these protrusions to Co adatoms, in agreement with previous experimental studies of Co adsorption on Si(100)2 × 1 in the submonolayer range at room temperature. [15,16,17] The dangling bonds of the Si surface are preferably saturated by adsorbed species to reduce the surface energy. [18] Fig.…”

Section: Illustration Of the Use Of The Si Nanostripe Array As A Tempmentioning

confidence: 99%

Self‐assembled Si nanostripe grating at the molecular scale as a template for 1D growth

Sahaf

Dettoni

Leandri

et al. 2010

Surface & Interface Analysis

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At room temperature, the early stages (submonolayer) of silicon (Si) deposition onto the anisotropic Ag(110) surface lead to the formation of flat-lying, individual Si nanostripes, with a high aspect ratio, all oriented along the Ag[−100] direction. Two kinds of nanostripes, varying in their width, are observed. When deposited at ∼200• C, these one-dimensional (1D) nanostructures self-assemble laterally, to form a perfect 1D-array of essentially identical nanowires, 1.6 nm in width. They cover uniformly the entire Ag substrate up to macroscopic sizes. The self-assembled Si nanostripes have been characterized by high-resolution scanning tunneling microscopy (STM), and a model of their atomic arrangement is proposed. This Si grating has been subsequently used as a template for selective 1D growth of 1D Co nanolines.

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“…In such a heterostructure of a Co thin film on a Si substrate, any structural disorder at the interface would drastically reduce the spin polarization at the interface and, hence, the spin injection efficiency [5,6]. As understood from the growth of Co on Si (100) at room temperature, Co atoms diffuse into the Si lattice and occupy tetrahedral interstitial sites in the Si matrix which is the main cause for the weakening of Si-Si bonds [7][8][9]. These weakened bonds allow Si atoms to diffuse out to the surface and form silicide-like phases which, in turn, cause spin depolarization.…”

Section: Introductionmentioning

confidence: 99%

Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth

Dash¹,

Goll²,

Carstanjen³

2009

Appl. Phys. A

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In this study thin Co films were grown on Si (100): (1) with one monolayer of Sb as surfactant and (2) without any surfactant. The Co film, its interface with the Si substrate and the behavior of the Sb surfactant layer were investigated during the growth by high-resolution Rutherford backscattering. By the use of Sb, the evaporated cobalt grows in a layer-by-layer mode and the mixing of Co and Si at the interface is strongly reduced. During the evaporation of Co, Sb floats on the surface for all Co coverages with some incorporation in the grown Co film only for higher coverages. The improvement of the interface quality is also reflected in the magnetic properties of the Co film.

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Preparation-dependent Co/Si(100) (2×1) interface growth: Spontaneous silicide formation versus interstitial-site mechanism

Cited by 50 publications

References 12 publications

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Self‐assembled Si nanostripe grating at the molecular scale as a template for 1D growth

Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth

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