Preparation of a 10 nm thick single-crystal silicon membrane self-supporting over a diameter of 1 mm

Utteridge, S.; Sashin, Vladimir; Canney, S. A.; Ford, Michael J.; Zhang, Fang; Oliver, David J.; Vos, Maarten; Weigold, E.

doi:10.1016/s0169-4332(00)00216-6

Cited by 17 publications

(16 citation statements)

References 17 publications

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“…The contribution from carbon substrate could easily be subtracted from the spectrum, while (e,2e) events occurring deeper within the target (non-shaded area) contribute mainly to the background intensity. The thickness of solid targets must not exceed about 10 nm, otherwise, background events due to multiple scattering in the target dominate the (e,2e) signal [36].…”

Section: (E2e) Spectrometermentioning

confidence: 99%

Electronic band structure of calcium oxide

Bolorizadeh

Sashin

Kheifets³

et al. 2004

Journal of Electron Spectroscopy and Related Phenomena

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Abstract. We employed electron momentum spectroscopy (EMS) to measure the bulk electronic structure of calcium oxide. We extracted the electron momentum density (EMD), density of occupied states (DOS), band dispersions, bandwidths and intervalence bandgaps from the data. The results are compared with calculations based on the full potential linear muffin-tin orbital (FP-LMTO) approximation. While the bandwidths of 0.6 ± 0.2 eV and 1.2 ± 0.1 eV for the s-and p-bands, respectively, and their dispersions agree well with the LMTO calculation, the relative intensity of the two bands is at odds with the theory. The measured intervalence bandgap at the Γ-point of 16.5 ± 0.2 eV is larger by 2.1 eV than that from the LMTO calculation. The experimental bandwidth of the Ca 3p semi-core level of 0.7 ± 0.1 eV agrees with the LMTO prediction. The measured bandgap between this level and the s-band is 3.6 ± 0.2 eV. The Ca 3s-3p level splitting is in excellent agreement with the literature.

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Section: (E2e) Spectrometermentioning

confidence: 99%

Electronic band structure of calcium oxide

Bolorizadeh

Sashin

Kheifets³

et al. 2004

Journal of Electron Spectroscopy and Related Phenomena

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“…The substrate preparation procedure was described elsewhere for both Si 16 and Cu 8 and the final thickness of the thin single crystal substrates was around 100Å. However, owing to the statistical nature of sputtering, the thickness is not expected to be homogenous.…”

Section: Methodsmentioning

confidence: 99%

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

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The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si.

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“…For thicker targets the signal is swamped by multiple scattering of the electrons. Although we have been able to produce 6 nm thick single-crystal free-standing targets of silicon 31 , it is difficult to do the same for alkali oxide targets. Instead, we exploit the relative surface sensitivity of the spectrometer afforded by the low ejected electron energy, and prepare samples by evaporation onto a 3 nm thick amorphous carbon substrate.…”

Section: B Sample Preparationmentioning

confidence: 99%