Preparation of biaxially textured CeO2 buffer layers by ion beam-assisted deposition

Wang, J; Fromknecht, R.; Linker, G.

doi:10.1016/s0257-8972(02)00304-3

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…Titanium has been used to precisely monitor the proton energy up to 30-40 MeV using the nat Ti(p,xn) 48 V nuclear reaction [4][5][6]. Thin layers of cerium dioxide (CeO 2 ) have been prepared by various methods such as electrodeposition [7][8][9], hydrothermal [10], ion beam-assisted deposition [11], laser chemical vapor deposition [12][13][14], microwave-assisted heating [15], precipitation [16,17], magnetron sputtering [18,19], and sol-gel [20] methods. CeO 2 has salient characteristics such as oxygen buffer layers, high dielectric constant, and distinctive photocatalytic and optical properties, which allows its diverse applications in direct methanol fuel cells [21][22][23], direct alcohol fuel cells [24], proton exchange membrane (PEM) fuel cells [25,26], solid oxide fuel cells [27], and solar cells [28], humidity and chemical sensors [29][30][31], dye-degradation [32], and sunscreen cosmetics [33].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Cerium Dioxide Layers on Titanium by Electrodeposition with Organic Solution

Nande

Kostyukova

Choi

et al. 2017

Journal of Nanomaterials

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Layers of cerium dioxide nanoparticles were prepared on titanium by electrodeposition with organic solution. Three concentrations of cerium ions were used at 31.6 V. The organic solution was isobutanol and titanium foils were used as anodes and cathodes. Currents were monitored during the electrodeposition. Deposition times ranged from 0.5 to 8 h. Deposited Deposited layers were calcined at 700 K for 30 min. The morphology and composition of the deposited layers were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). As-prepared and calcined deposition layers were assayed to be cerium dioxide. The average crystallite size increased from 4 to 7 nm through calcination at 700 K. Sizes of calcined cerium oxide agglomerates were ranging from 73 to 146 nm for 30 min deposition and 209 to 262 nm for 8 h deposition. The electrodeposition efficiencies of 0.5 h deposition at three concentrations were measured to be highest.

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Section: Introductionmentioning

confidence: 99%

Preparation of Cerium Dioxide Layers on Titanium by Electrodeposition with Organic Solution

Nande

Kostyukova

Choi

et al. 2017

Journal of Nanomaterials

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“…Moreover, in order to make the tapes economical, the process and structure need to be more simplified. Textured buffer films have been deposited using several methods such as PLD [4], IBAD [5], sputtering [6], e-beam evaporation [7], MOCVD, and MBE [8]. Among these methods, PLD and IBAD produce CeO 2 films with better (200) texture than those produced by the other methods.…”

Section: Introductionmentioning

confidence: 99%

Effects of Deposition Parameters on the Crystallinities of CeO2 and Y2O3 Buffer Layers on Textured Ni Deposited by Magnetron Sputtering

Seok

Lee

2007

SSP

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The epitaxial growth conditions of CeO2 and Y2O3 single buffer layers on textured Ni tapes were examined using rf magnetron sputtering, and the process conditions for the sequential and mixture buffer layers of these two materials were investigated respectively in order to develop a more simplified buffer architecture. The CeO2 single layer exhibited a well developed (200) epitaxial growth at Ar/10%O2 gas below 450°C, although the epitaxial property was decreased with increasing layer thickness. With regard to the deposition of Y2O3 on Ni, the epitaxial growth was not successful. The epitaxy of Y2O3 on Ni was very sensitive to the O2 gas pressure during sputtering. The repeated sequential architecture of the CeO2 and Y2O3 layers exhibited a good epitaxial property at 400°C/(Ar/10%O2) for the initial CeO2 layer and 700°C/Ar and 700°C/(Ar/10%O2) for the subsequent Y2O3 and CeO2 layers, respectively. The Y-doped CeO2 buffers with (200) epitaxy were successfully obtained by the co-sputtering of Ce and Y metals in a reactive gas condition, and the maximum target Y/Ce ratio for the epitaxy was about 1/10.

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High‐Performance Flexible Thin‐Film Transistors Based on Single‐Crystal‐Like Germanium on Glass

Asadirad

Gao

Dutta

et al. 2016

Adv Elect Materials

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Thin‐film transistors (TFTs) grown on a flexible glass substrate using single‐crystal‐like germanium (Ge) channel to simultaneously achieve high carrier mobility, high performance characteristics, mechanical flexibility, and cost‐effective large‐area manufacturing are reported. High‐crystalline‐quality materials of biaxially textured CeO2 deposited at room temperature by ion‐beam‐assisted deposition followed by single‐crystal‐like Ge epitaxially grown at 550 °C by plasma‐enhanced chemical vapor deposition on an amorphous substrate are developed. p‐type Ge with {111} surface shows well‐aligned grains in both out‐of‐plane and in‐plane directions, as characterized by reflection high‐energy electron diffraction, X‐ray diffraction, and Raman spectroscopy. The material structures are fabricated to transistor devices with top‐gate geometry. The devices (channel width and length = 80 and 14 μm) exhibit performance characteristics with on/off ratio of ≈106, a field‐effect mobility of ≈105 cm2 V−1 s−1, and saturation current levels of ≈3.5 mA, which are significantly higher than performance metrics of other state‐of‐the‐art TFTs based on amorphous Si, organic semiconductors, and semiconducting oxides. This development can open a new avenue for next‐generation TFTs beyond the display applications.

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Preparation of biaxially textured CeO2 buffer layers by ion beam-assisted deposition

Cited by 7 publications

References 12 publications

Preparation of Cerium Dioxide Layers on Titanium by Electrodeposition with Organic Solution

Preparation of Cerium Dioxide Layers on Titanium by Electrodeposition with Organic Solution

Effects of Deposition Parameters on the Crystallinities of CeO<sub>2</sub> and Y<sub>2</sub>O<sub>3</sub> Buffer Layers on Textured Ni Deposited by Magnetron Sputtering

High‐Performance Flexible Thin‐Film Transistors Based on Single‐Crystal‐Like Germanium on Glass

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