1995
DOI: 10.1016/0040-6090(95)06657-8
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Preparation of c-axis oriented ZnO films by low-pressure organometallic chemical vapor deposition

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Cited by 40 publications
(13 citation statements)
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“…In the preparation of ZnO nanoparticles various chemical processes viz., sol-gel method [36,37], phase transfer technique [8], hydrolysis of chelate complex [38] and polymer stabilization [39] have also been reported. Some of the other reported methods are low-pressure chemical vapor deposition [40], atomic layer deposition, thermal decomposition of precursors [41], spray pyrolysis, [42] etc. In the present paper we have considered the preparation and characterization of three batches of samples viz., nanoparticles of ZnO (batch-I), nanoparticles of Eu 2 O 3 (batch-II) and nanocomposite of ZnO and Eu 2 O 3 {(ZnO) 0.55 (Eu 2 O 3 ) 0.45 } (batch-III).…”
Section: Introductionmentioning
confidence: 99%
“…In the preparation of ZnO nanoparticles various chemical processes viz., sol-gel method [36,37], phase transfer technique [8], hydrolysis of chelate complex [38] and polymer stabilization [39] have also been reported. Some of the other reported methods are low-pressure chemical vapor deposition [40], atomic layer deposition, thermal decomposition of precursors [41], spray pyrolysis, [42] etc. In the present paper we have considered the preparation and characterization of three batches of samples viz., nanoparticles of ZnO (batch-I), nanoparticles of Eu 2 O 3 (batch-II) and nanocomposite of ZnO and Eu 2 O 3 {(ZnO) 0.55 (Eu 2 O 3 ) 0.45 } (batch-III).…”
Section: Introductionmentioning
confidence: 99%
“…Low-loss high frequency SAW devices have been fabricated by using epitaxial ZnO thin films. Many deposition and growth techniques, such as, radio frequency (rf) sputtering, 11 laser ablation, 12 MBE, 13 and metalorganic chemical vapor deposition (MOCVD), [14][15][16] have been employed for ZnO film deposition. Hamdani et al have grown high-quality GaN films on ZnO single crystal substrates by reactive molecular beam epitaxy (MBE).…”
Section: Introductionmentioning
confidence: 99%
“…Wurtzite zinc oxide (ZnO), a direct wide-bandgap semiconductor (3.37 eV at room temperature), has potential for use in UV light-emitting diodes [1], and many researchers have concentrated their efforts on growing high-quality ZnO epitaxial layers [2][3][4]. The absence of suitable substrates led many studies to perform heteroepitaxial ZnO growth on a sapphire substrate.…”
Section: Introductionmentioning
confidence: 99%