1990
DOI: 10.1016/0040-6090(90)90033-a
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Preparation of cubic boron nitride film by CO2 laser physical vapour deposition with simultaneous nitrogen ion supply

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Cited by 72 publications
(5 citation statements)
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“…Wada and Yamashita 182 reported a HV value around 4500-5500 kg mm 22 at 10 g load in 4000 A ˚thick film. Similarly, Mineta et al 183 reported values in the range of 3800-4600 kg mm 22 at 25 g load for 1 . 5 mm thick film (Table 4).…”
Section: Hardnessmentioning
confidence: 82%
“…Wada and Yamashita 182 reported a HV value around 4500-5500 kg mm 22 at 10 g load in 4000 A ˚thick film. Similarly, Mineta et al 183 reported values in the range of 3800-4600 kg mm 22 at 25 g load for 1 . 5 mm thick film (Table 4).…”
Section: Hardnessmentioning
confidence: 82%
“…Therefore, regarding the three ablation cases of Nd:YAG laser and Ti:sapphire laser ͑low and high fluence regimes͒, we perform XPS analysis of the ablated surface to investigate whether the boron layer is formed or not. The laser fluence of the Nd:YAG laser is 0.49 J/cm 2 respectively. It is seen from Figs.…”
Section: Resultsmentioning
confidence: 99%
“…There are many reports that BN crystal thin film is fabricated using the CO 2 laser, the KrF excimer laser, and the Nd:YAG laser by physical vapor deposition and pulsed laser deposition. [2][3][4][5][6] In addition, thin film fabrication of BN ceramic 7 and ablation of BN ceramic by the microsecond pulsed CO 2 laser 8 are reported.…”
Section: Introductionmentioning
confidence: 99%
“…First, the preparation of high-quality c -BN presents a significant challenge, even more difficult than the synthesis of diamond due to the very different electronegativity of boron and nitrogen . Most of the previously fabricated nanofilms, either by physical or by chemical vapor deposition techniques, are usually in polycrystalline form and adhered by amorphous or turbostratic BN around crystal domains. , Yet for practical applications, it is optimal to have c -BN nanofilms with uniform crystallization and designable thickness. Second, c -BN is intrinsically an insulator with wide energy gap over 6 eV, which is far beyond the gap values (<3 eV) desired for most of the current electronic and optical devices .…”
Section: Introductionmentioning
confidence: 99%