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The Dynamic Friction Polishing Method enables highly efficient abrasive-free polishing of single crystal diamond and polycrystalline diamond (PCD) by simply pressing them against a stainless steel (SUS304) disc rotating at a high peripheral speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere. In this paper, the polishing mechanism involved in this method is discussed based on the polishing efficiency and the X-ray diffraction analysis of the machined swarf and the metal disc surface of SUS304 used for polishing the surface of a single crystal diamond in various polishing atmospheres. The material removal mechanism is estimated to be due to the diffusion of carbon from the diamond into the disc and its subsequent evaporation by oxidization.

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Mica powder which has never been reported as abrasives was found to be very effective for mechanochemical polishing of Silicon wafers. It has demonstrated to be excellent in terms of polishing rates and surface roughness, when a polisher was used much harder than the conventional hard polishers. The use of this type of new abrasives enables to improve the wafer flatness to meet the demand to reduce the edge exclusion for the next generation silicon wafers. Experimental ProcedureThe polishing experiment was carried out using a small polishing machine shown in Fig. 3, where