Preparation of Epitaxial GaAs Films by Vacuum Evaporation of the Elements

Steinberg, R. F.; Scruggs, D. M.

doi:10.1063/1.1708089

Cited by 21 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The high solubility of NaCl and low solubility of III–Vs in water presents an alternative avenue for the possibility of a rapidly dissolvable sacrificial layer with high selectivity in a nontoxic environment and was shown to be effective in various material systems and devices. − Both GaAs and NaCl are cubic, and while NaCl has a higher thermal expansion coefficient, they are lattice matched at ∼100 °C. The first integration of these two materials occurred in the early days of epitaxy and vacuum deposition, with NaCl being a popular substrate choice for both semiconductors and metals. − Previous demonstrations of growth of GaAs on NaCl used bulk NaCl substrates that suffered from reactivity with water vapor in the air. These substrates were vacuum-cleaved and deliberately desorbed large amounts of material in situ prior to growth to produce a clean surface .…”

Section: Introductionmentioning

confidence: 99%

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System

et al. 2022

View full text Add to dashboard Cite

The high cost of substrates for III–V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali halide salt thin film between a III–V substrate and overlayer. Much of the difficulty stems from the growth of GaAs on an actively decomposing NaCl surface at elevated temperatures. Interestingly, the presence of an in situ electron beam incident on the NaCl surface, prior to and during GaAs deposition, affects the crystallinity and morphology of the III–V overlayer. Here, we investigate a wide range of growth temperatures and the timing of the impinging flux of both elemental sources and high energy electrons at different points during the growth. We show that an assortment of morphologies (discrete islands, porous material, and fully dense layers with sharp interfaces) and crystallinity (amorphous, crystalline, and highly textured) occur depending on the specific growth conditions, driven largely by changes in GaAs nucleation which is greatly affected by the presence of the reflection high energy electron diffraction beam.

show abstract

Section: Introductionmentioning

confidence: 99%

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System

et al. 2022

View full text Add to dashboard Cite

show abstract

Ein Beitrag zur Herstellung von Galliumarsenid‐Epitaxie‐Schichten im Hochvakuum

Kleber¹,

Tappe²,

Melle³

1970

Cryst Res and Technol

View full text Add to dashboard Cite

GaAs-Schichten wurden nach dem Verfahren von HOWSON (Verdampfung aus einer Quelle) hergestellt und untersucht. Als Substrate dienten in Luft gespaltene NaF-, NaC1-und NaBr-Kristalle. Die Methode zeigte bei dem verwendeten apparetiven Aufbau keine gute Reproduzierbarkeit. Optimale Orientierungseffekte wurden fiir NaBr als Substrat bei einer Aufdampfgeschwindigkeit von 15 A s-l und bei einer Tragertemperatur von etwa 300 "C erzielt. U. a. wurde festgestellt, daI3 die obergangstemperatur der amorphen in die kristallisierte Phase des GaAs fur NaCl und NaF nahezu ubereinstimmend bei etwa 250 "C liegt. Vor allem in den Systemen GaAs/NaCl und GaAs/NaBr konnten gute Dekorationseffekte beobachtet werden.GaAs-films have been vacuum deposited on air cleaved NaF-, NaCl-, NaBrsubstrates by the technique of HOWSON (evaporation from one single source). It was stated that the results obtained with our apparatus were not sufficient reproducible. Optimum orientation effects were achieved with a deposition rate of 15 A sec-l and with a substrate temperature of -300 "C. The temperature of structural change from amorphous to cristalline phase was evaluated to be nearly equal for NaCl and NaF at 250 "C. Particularly in the systems GaAs/NaCl and GaAs/NaBr remarkable orientation effects were observed.

show abstract

1962 - 1970

Gebhardt¹,

Neuhaus²

Epitaxy Data of Inorganic and Organic Crystals

View full text Add to dashboard Cite

Preparation of Epitaxial GaAs Films by Vacuum Evaporation of the Elements

Cited by 21 publications

References 4 publications

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System

Ein Beitrag zur Herstellung von Galliumarsenid‐Epitaxie‐Schichten im Hochvakuum

1962 - 1970

Contact Info

Product

Resources

About