Preparation of epitaxial galliumnitride

Nickl, J.J.; Just, Wolfgang; Bertinger, R.

doi:10.1016/0025-5408(74)90066-x

Cited by 20 publications

(4 citation statements)

References 9 publications

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“…As an important dielectric substrate material, sapphire single crystal is used for many device purposes, such as SOS technology [7,8] and GaN heteroepitaxy [9,10]. In many of these applications, stringent surface quality requirements, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effects of surface treatment on sapphire substrates

Wang

Liu

Peng

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effects of surface treatment on sapphire substrates

Wang

Liu

Peng

et al. 2005

Journal of Crystal Growth

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“…Another possible way is to use gallium trichloride, which can be evaporated from a bubbler or produced in a high‐temperature boat by chlorination in excess of chlorine, or by chlorination at temperatures below 300 °C, where the main products of the chlorination reaction are GaCl 3 and its dimer Ga 2 Cl 6 (Figure a) formed in the reaction

G {normala}_{liquid} + 3 HCl \to GaC {normall}_{3} + \frac{3}{2} {normalH}_{2}

…”

Section: Growth System Designmentioning

confidence: 99%

“…One known way to overcome this problem is to use an organometallic [37][38][39] or organometallic chloride [40][41][42] precursor that is converted to gallium monochloride in the hot zone of the reactor by reaction with hydrogen chloride or by decomposition, respectively. The drawback of this approach is the possible carbon contamination and the formation of condensed carbon co-products [43].…”

Section: B External Boatmentioning

confidence: 99%

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Voronenkov

Bochkareva

Zubrilov

et al. 2019

Physica Status Solidi (a)

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An hydride vapor-phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.

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“…In addition to low defect density [1,2], the HVPE approach is inherently scalable to very large wafer area. Early reports of GaN growth by HVPE [3,4] produced material that was heavily n-type with a carrier concentration in excess of 10 18 cm -3 . Since that time, the background impurities have been reduced.…”

Section: Introductionmentioning

confidence: 99%

Background Impurity Reduction and Iron Doping of Gallium Nitride Wafers

Vaudo

Salant

et al. 2002

MRS Proc.

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Background impurities and the resulting electrical characteristics were studied for GaN wafers grown using hydride vapor phase epitaxy at various growth conditions. The electron concentration was found to decrease with increasing GaN thickness, by orders of magnitude in the first few microns of growth, but continuing gradually for thousands of microns. Physical removal of the backside degenerate layer enabled improved analysis of the electrical properties. Secondary ion mass spectroscopy was used to determine that the presence of oxygen and silicon accounted for the electron concentration for unintentionally n-type doped material. The concentration of oxygen was found to vary more than that of silicon and increased with decreasing growth temperature. The resistivity was measured to be as high as 1 ohm-cm, corresponding to a carrier concentration of 10 16 cm -3 . Iron was demonstrated to effectively compensate the residual donors and increased the resistivity to greater than 10 9 ohm-cm at room temperature and greater than 3x10 5 ohm-cm at 250°C. An activation energy for the iron-doped GaN was determined by variable temperature resistivity measurements to be 0.51 eV.

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Preparation of epitaxial galliumnitride

Cited by 20 publications

References 9 publications

Effects of surface treatment on sapphire substrates

Effects of surface treatment on sapphire substrates

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Background Impurity Reduction and Iron Doping of Gallium Nitride Wafers

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