2014
DOI: 10.1007/s10948-014-2493-4
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Preparation of Epitaxial MgO Films Deposited by RF Magnetic Sputtering on the IBAD-MgO Substrate

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Cited by 4 publications
(2 citation statements)
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“…As the deposition temperature gradually increased, both the out-of-plane and in plane textures were gradually optimized. When the deposition temperature reached 500°C, the biaxial texture of the epi-MgO films was Δω = 2.2° and ΔΦ = 4.8°, respectively It has been proposed that the grain size of MgO increases with the deposition temperatur [42]. The large self-epitaxial MgO grains can release the stress in the MgO films between the interface of IBAD-MgO and epi-MgO [43].…”
Section: Resultsmentioning
confidence: 99%
“…As the deposition temperature gradually increased, both the out-of-plane and in plane textures were gradually optimized. When the deposition temperature reached 500°C, the biaxial texture of the epi-MgO films was Δω = 2.2° and ΔΦ = 4.8°, respectively It has been proposed that the grain size of MgO increases with the deposition temperatur [42]. The large self-epitaxial MgO grains can release the stress in the MgO films between the interface of IBAD-MgO and epi-MgO [43].…”
Section: Resultsmentioning
confidence: 99%
“…However if the temperature is too high, interdiffusion between films and substrate can occur, which leads to a blurred interface and an increase of the in-plane FWHM value. [18] The effect of thickness on the growth of the CeO 2 layer was studied by keeping the substrate temperature at 550 ∘ C and varying the deposition time. Figure 3 shows the relationship between ∆𝜑 and the thickness of the PLD-CeO 2 layer on IBAD-MgO with ∆𝜑 around 7 ∘ .…”
mentioning
confidence: 99%