Preparation of few-layer graphene on on-axis 4H–SiC (000<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0001.gif" overflow="scroll"><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mrow><mml:mo stretchy="true">¯</mml:mo></mml:mrow></mml:mover></mml:math>) substrates using a modified SiC-stacked method

Hu, Yanfei; Zhang, Yuming; Guo, Hui; Chong, Laiyuan; Zhang, Yimen

doi:10.1016/j.matlet.2015.10.116

Cited by 8 publications

(6 citation statements)

References 7 publications

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“…5,6 The growth of epitaxial graphene has been reported on both the Si face (0001) and C face ( 000 1 ¯ ) of hexagonal 4H- and 6H-SiC substrates, particularly because a large number of graphene monolayers are stacked on the C face of hexagonal SiC polytypes. 7–11 An atomically smooth and damage-free surface is necessary to achieve high-performance applications of SiC substrates. However, SiC is difficult to machine because of its extreme hardness and chemical inertness, which limit its application considerably.…”

Section: Introductionmentioning

confidence: 99%

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Luo

et al. 2017

Proceedings of the Institution of Mechanical Engineers, Part B:

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This article describes the mechanical planarization machining of SiC substrates involving the Si face (0001) and C face ( 000 1 ¯ ) of N-type (doping nitrogen) 4H-SiC, N-type 6H-SiC, and V-type (doping vanadium) 6H-SiC with a sol–gel polishing pad. The polishing results indicate that the C face, which has a surface roughness of less than 2 nm, is smoother than the Si face (>10 nm), and the material removal rate of the C face is higher than that of the Si face. The removal mechanism of SiC substrates was investigated with regard to the wear debris and subsurface structure through transmission electron microscopy, and instrumented nanomechanical tests were performed to further reveal the removal mechanism by nanoindentation and nanoscratching. The analysis results demonstrate that the difference in the material removal rates of the Si face and C face depends on the material removal scale together with the mechanical properties of SiC substrates. The processing of SiC substrates is dominated by the mechanical removal of SiC material during mechanical planarization machining.

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Section: Introductionmentioning

confidence: 99%

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Luo

et al. 2017

Proceedings of the Institution of Mechanical Engineers, Part B:

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“…It has been extensively found that graphene grown on the C-face hexagonal SiC presents smaller domains with a larger distribution of graphene thickness than on the Si-face [39,[53][54][55][56][57]. Unlike the Si-face, there is no evidence to manifest the existence of a buffer layer on graphene/C-face SiC samples so far, although (2  2), (3  3) surface reconstructions were observed [58].…”

Section: Growth Of Graphene On the C-face Sicmentioning

confidence: 96%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

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Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

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“…A little residue power remained in end-of-life LIBs. To prevent short-circuiting and self-ignition, spent LIBs were first fully discharged (Zhu et al, 2016), and the common method is to place spent LIBs in salt solution (Li et al, 2016c).…”

Section: Recycling Strategy Of All-components From Spent Libsmentioning

confidence: 99%

“…With rich and extraordinary physical properties, graphene has become an intensively researched material (Hu et al, 2016). According to our research, graphite from discarded LIBs still possesses the complete layer structure, and the embedding of some oxygen-containing groups between layer structures is more conducive to the preparation of graphite oxide (Guo et al, 2016).…”

Section: Recycling Strategy Of All-components From Spent Libsmentioning

confidence: 99%

A review on management of spent lithium ion batteries and strategy for resource recycling of all components from them

Zhang

et al. 2017

Waste Manag Res

129

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The wide use of lithium ion batteries (LIBs) has brought great numbers of discarded LIBs, which has become a common problem facing the world. In view of the deleterious effects of spent LIBs on the environment and the contained valuable materials that can be reused, much effort in many countries has been made to manage waste LIBs, and many technologies have been developed to recycle waste LIBs and eliminate environmental risks. As a review article, this paper introduces the situation of waste LIB management in some developed countries and in China, and reviews separation technologies of electrode components and refining technologies of LiCoO and graphite. Based on the analysis of these recycling technologies and the structure and components characteristics of the whole LIB, this paper presents a recycling strategy for all components from obsolete LIBs, including discharge, dismantling, and classification, separation of electrode components and refining of LiCoO/graphite. This paper is intended to provide a valuable reference for the management, scientific research, and industrial implementation on spent LIBs recycling, to recycle all valuable components and reduce the environmental pollution, so as to realize the win-win situation of economic and environmental benefits.

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Preparation of few-layer graphene on on-axis 4H–SiC (0001¯) substrates using a modified SiC-stacked method

Cited by 8 publications

References 7 publications

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

A review on management of spent lithium ion batteries and strategy for resource recycling of all components from them

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