Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Lu, Jing; Luo, Qiufa; Xu, Xipeng; Huang, Hui; Jiang, Feng

doi:10.1177/0954405417718595

Cited by 40 publications

(21 citation statements)

References 34 publications

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“…The ultra-precision machining technology , is one of the effective methods to achieve non-destructive machining. The ultra-hardness and brittleness of 6H-SiC , and the damage caused by defects such as crystal fracture, crystalline transformation, dislocation slip, and microcracking during reworking − affect the performance of machined parts. The temperature gradient of friction, friction parameters, and parameter changes of residual stresses can affect the surface deformation damage of 6H-SiC to different degrees.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction

Zhang

Feng

et al. 2022

ACS Omega

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To investigate the subsurface damage of 6H-SiC nanofriction, this paper uses molecular dynamics analysis to analyze the loading process of friction 6H-SiC surfaces, thus providing an in-depth analysis of the formation mechanism of subsurface damage from microscopic crystal structure deformation characteristics. This paper constructs a diamond friction 6H-SiC nanomodel, combining the radial distribution function, dislocation extraction method, and diamond identification method with experimental analysis to verify the dislocation evolution process, stress distribution, and crack extension to investigate the subsurface damage mechanism. During the friction process, the kinetic and potential energies as well as the temperature of the 6H-SiC workpiece basically tend to rise, accompanied by the generation of dislocated lumps and cracks on the sides of the 6H-SiC workpiece. The stresses generated by friction during the plastic deformation phase lead to dislocations in the vicinity of the diamond tip friction, and the process of dislocation nucleation expansion is accompanied by energy exchange. Dislocation formation is found to be the basis for crack generation, and cracks and peeled blocks constitute the subsurface damage of 6H-SiC workpieces by diamond identification methods. Friction experiments validate microscopic crystal changes against macroscopic crack generation, which complements the analysis of the damage mechanism of the simulated 6H-sic nanofriction subsurface.

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Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction

Zhang

Feng

et al. 2022

ACS Omega

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“…However, SiC is a typical difficult-to-machine material due to its high hardness and strong chemical inertness. The subsurface damage (SSD) is easily caused during substrate processing [6], which will impair the mechanical, electronic, and optical properties of materials [7]. For this reason, the characterization of subsurface damage is conducive to advanced applications.…”

Section: Introductionmentioning

confidence: 99%

Mueller Matrix Ellipsometric Characterization of Nanoscale Subsurface Damage of 4H-SiC Wafers: From Grinding to CMP

Cui

et al. 2022

Front. Phys.

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Subsurface damage of 4H-silicon carbide (SiC) wafers, which is detrimental to the performance and lifetime of SiC-based photoelectric devices, is easily induced during surface machining process due to their particular mechanical and physical properties. A nondestructive and effective characterization technique is essential for high quality products in the wafer manufacturing process. A method based on the Mueller Matrix Spectroscopic Ellipsometry (MMSE) is proposed to detect the nanoscale subsurface damage of 4H-SiC wafers induced by grinding and polishing. The Mueller matrix elements which are sensitive to the damage information have been identified through both simulation and experiment. The damage layer and its roughness are considered in optical modeling at different processing stages. The results show that both the surface texture and the damage layer contribute to the Mueller matrix values. The fitting thickness of the damage layer is consistent with the value from transmission electron microscope (TEM); the refractive index of the damage layer matches the surface elements analysis result from X-ray photoelectron spectroscopy (XPS). The results suggest that the MMSE-based method could offer a promising nondestructive method to detect global wafer subsurface damage and its evolution during grinding and polishing, which eventually could benefit process optimization in the whole wafer manufacturing process.

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“…Ma et al [21] researched the nanoindentation behavior of polycrystalline 3C-SiC thin films exhibiting columnar microstructures by acoustic emission signal monitoring and time-frequency spectrum analysis. Lu et al [22] studied 6H-SiC substrate characteristics by means of nanoindentation and found that the C face is easier to remove than the Si face during mechanical planarization machining. Datye et al [23] evaluated the fracture toughness and plastic behavior of 6H-SiC single crystal by nanoindentation.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

Chai

et al. 2020

Micromachines

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In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic-brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.

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Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining

Cited by 40 publications

References 34 publications

Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction

Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction

Mueller Matrix Ellipsometric Characterization of Nanoscale Subsurface Damage of 4H-SiC Wafers: From Grinding to CMP

Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale

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