2007
DOI: 10.2320/matertrans.48.700
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Preparation of Fullerene Polycrystalline Films on Different Substrates by Physical Vapor Deposition

Abstract: Fullerene (C 60 ) films were prepared on Si, ITO, and Cu substrates by the physical vapor deposition (PVD) method. It was observed that the morphology and structure of fullerene films strongly depend on the substrates. Along with the interactions between fullerenes and substrates increasing from ITO, Si to Cu substrate, C 60 forms small polycrystalline grains, large polycrystalline grains and fullerene oligomers under the same experimental conditions. The irreversible C 60 polymerization on Cu substrate is sug… Show more

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Cited by 3 publications
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“…Several fabrication routes have been proposed for fullerene containing selfassembled monolayers (SAMs), starting from indirect approachbinding of fullerenes to surfaces covered with reactive groups, 7,8 direct deposition of functionalized fullerenes from the solution (done usually with the use of sulphur anchoring groups), 9,10 and nally, electrospray 11 or physical vapor deposition. 12 Nonetheless, obtaining well-organized monolayers of fullerene derivatives in a simple, industryfriendly, large scale fabrication protocol still remains a challenge. Essentially, if the deposition process is not handled with mandatory care head-to-tail assembly or/and multilayer growth on metallic surfaces are commonly observed interfering phenomena.…”
Section: Introductionmentioning
confidence: 99%
“…Several fabrication routes have been proposed for fullerene containing selfassembled monolayers (SAMs), starting from indirect approachbinding of fullerenes to surfaces covered with reactive groups, 7,8 direct deposition of functionalized fullerenes from the solution (done usually with the use of sulphur anchoring groups), 9,10 and nally, electrospray 11 or physical vapor deposition. 12 Nonetheless, obtaining well-organized monolayers of fullerene derivatives in a simple, industryfriendly, large scale fabrication protocol still remains a challenge. Essentially, if the deposition process is not handled with mandatory care head-to-tail assembly or/and multilayer growth on metallic surfaces are commonly observed interfering phenomena.…”
Section: Introductionmentioning
confidence: 99%