Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Abstract

The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.

Multi-pixels gallium oxide UV detector array and optoelectronic applications

“…And the Ga 2 O 3 thin films can be grown by the laser molecular beam epitaxy (laser-MBE) [31,32], pulsed laser deposition (PLD) [33], magnetron sputterin [34,35], metalorganic chemical vapor deposition (MOCVD) [36][37][38][39], mist-CVD [40], atomic layer deposition (ALD) [41,42], and metal-organic chemical vapor deposition (MOVPE) [43] techniques. At present, research on Ga 2 O 3 mainly focuses on thin film [44][45][46][47], device and its integration. The research on thin film mainly includes the fabrication of high-quality thin films, doping, and the fabrication of solar-blind photodetector based on films such as field effect transistors [48][49][50] and photodiode.…”