Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

Orita, Masahiro; Hiramatsu, Hidenori; Ohta, Hiromichi; Hirano, Masahiro; Hosono, Hideo

doi:10.1016/s0040-6090(02)00202-x

Cited by 272 publications

(171 citation statements)

References 8 publications

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“…Single-crystal substrates of β-Ga 2 O 3 are grown by a variety of melt-based methods, including CONTACT Lisa M. Porter lporter@andrew.cmu.edu floating-zone (FZ) [7][8][9][10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods. Epitaxial films of β-Ga 2 O 3 have been grown using various vapor phase techniques, including metalorganic chemical vapor deposition (MOCVD) [14], molecular beam epitaxy (MBE) [1,[15][16][17][18][19], pulsed-laser deposition (PLD) [20], halide vapor phase epitaxy (HVPE) [21], and MIST epitaxy [22]. However, increasing interest in the other Ga 2 O 3 phases has arisen in recent years, particularly the metastable rhombohedral α-and hexagonal ε-Ga 2 O 3 phases, both of which have been observed to grow epitaxially on oriented substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

Yao

Okur

Lyle

et al. 2018

Materials Research Letters

198

109

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Heteroepitaxial films of Ga 2 O 3 were grown on c-plane sapphire (0001). The stable phase β-Ga 2 O 3 was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures between 500 • C and 850 • C. Metastable α-and ε-phases were grown when using the halide vapor phase epitaxy (HVPE) technique, at growth temperatures between 650 • C and 850 • C, both separately and in combination. XTEM revealed the better lattice-matched α-phase growing semi-coherently on the substrate, followed by ε-Ga 2 O 3 . The epitaxial relationship was determined to be [1100] IMPACT STATEMENTThis study demonstrates one of the first epitaxial growths of multiple polymorphs of Ga 2 O 3 on sapphire (0001) substrates, including its β-, α-, and ε-phases. Epitaxial relationship is confirmed through HRTEM. ARTICLE HISTORY

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Section: Introductionmentioning

confidence: 99%

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

Yao

Okur

Lyle

et al. 2018

Materials Research Letters

198

109

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“…It is a transparent conducting oxide (TCO), especially for deep UV, and therefore has recently found use as a window material for deep UV, transparent field-effect transistors, and photodetectors. [30][31][32][33][34][35] A more recent work reported that non-stoichiometric, amorphous gallium oxide shows insulator-metal transition behavior. [36] Ga-doped zinc oxide (ZnO:Ga, GZO) is a wellknown n-type TCO material.…”

Section: Introductionmentioning

confidence: 99%

“…[36] Ga-doped zinc oxide (ZnO:Ga, GZO) is a wellknown n-type TCO material. [37] Thin films of gallium oxide have been prepared by various methods: (radiofrequency) magnetron sputter deposition, [1][2][3][4]6,7,9,10,12,25,27] electron beam evaporation, [15][16][17]21] pulsed laser deposition, [26,28,30,33,34,36] laser ablation, [31] CVD, [38][39][40][41][42][43][44][45][46][47] ALD, [48][49][50][51][52] molecular beam epitaxy, [32,35] vapor phase epitaxy, [53] spray pyrolysis, [54,55] and sol-gel process. [5,13,23,24] Among these methods, CVD is considered very important because it can readily be employed in industrial processes.…”

Section: Introductionmentioning

confidence: 99%

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Lee

Kim

Woo

et al. 2011

Chemical Vapor Deposition

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Thin films of gallium oxide (Ga 2 O 3 ) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal-organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non-pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280-300 8C with a growth rate of $0.3 Å per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga 2 O 3 , films are grown in the temperature range 450-6258C with the apparent activation energy of 225.5 kJ mol À1. This study shows that DMGIP can be utilized as a new source for the preparation of Ga 2 O 3 thin films.

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“…13 We successfully fabricated conductive -Ga 2 O 3 thin films by high-temperature pulsed-laser deposition at 880 C 14 and subsequently succeeded in fabricating the conductive films at 300 C by fine tuning the deposition conditions. 15 The optical bandgap estimated from the ðhÞ 2 -h plot was 4.9 eV.…”

Section: Transparent Oxide Electronics (New Frontier)mentioning

confidence: 98%

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

Hosono¹,

Kamiya²,

Hirano³

2006

Bulletin of the Chemical Society of Japan

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This review article describes recent progress in our research on cultivation of functionality in crystalline and amorphous transparent oxides utilizing nanostructures embedded in the material itself. It includes the background of our research and approach. Subjects included are material exploration and device application of transparent oxide semiconductors for transparent electronics, function emergence in nano-porous crystal 12CaO Á 7Al 2 O 3 utilizing active anion species stabilized by sub-nanometer-sized cages, and modified silica glass for vacuum/deep ultraviolet lasers. Our description of each subject include: background and approach, material design concept, fabrication or modification method, properties, and device fabrication. Emphasis is placed on the importance of a variety of built-in nanostructures in transparent oxides for novel function realization and the high potential of transparent oxides as ingredients for an ubiquitous element strategy of material research in this century.

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Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

Cited by 272 publications

References 8 publications

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

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Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

Cited by 272 publications

References 8 publications

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

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Resources

About

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

Growth and characterization of α-, β-, and ϵ-phases of Ga₂O₃ using MOCVD and HVPE techniques

ALD and MOCVD of Ga₂O₃ Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me₂GaOⁱPr