Preparation of InAs by annealing of two-layer In–As electrodeposits

Formation of GaAs by annealing of two-layer Ga-As electrodeposits

“…Instead, the diffractograms presented two characteristic broad bands in the 2θ ranges 23-42 • and 46-62 • , denoting an X-ray amorphous structure. A more insightful analysis of this structure will be reported elsewhere [3]. As-plated Ga electrodeposits show all the peaks typical of OR-Ga, in agreement with the ASTM cards [20].…”

“…Dependence of the logarithm of the Ga diffusion coefficient on the reverse of the absolute temperature (Arrhenius plot) for a-As deposits on polished Ga. Similar curves of Ga deposits on a-Sb [2] and of In deposits on a-As [3] and a-Sb [1] are also reported. diffusion of the electrodeposited and crystalline group III element (Ga and In) into the electrodeposited amorphous (a-) group V element (a-As and a-Sb).…”

“…In particular, we studied the formation of InSb [1], GaSb [2] and InAs [3]. In this paper we extend our research to the formation of GaAs and compare these results with the previous ones, and propose a general discussion of these processes.…”

“…The original temperature-dependent diffusion coefficient data for the Ga-As system will be discussed in connection with other III-V systems, previously studied in our group Ga-Sb [2], In-As [3] and In-Sb [1]; all the relevant results are summarised in Fig. 6.…”

“…In order to prepare the two-layer electrodeposits of group III-V metals it is customary to electrodeposit the group V element as a sublayer and subsequently the group III one as the top-layer [1][2][3]. However, this procedure was not possible in the present case because As tends to react cathodically giving rise to the formation of AsH 3 , as recalled above.…”