Preparation of indium selenide thin film by electrochemical technique

Abstract

Indium Selenide (In x Se y ) layers were potentiostatically deposited on glass/fluorine-doped tin oxide (FTO) substrates, using electro-chemical technique from aqueous solution containing 0.10 M InCl 3 and 0.02 M SeO 2 . The electrodeposits were characterised using a wide range of analytical techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscopy (AFM), optical absorption and photoelectrochemical (PEC) cell, for their structural, morphological, optical and electrical properties. The XRD show that the prepared films consist of mixed phases of InSe and In 2 Se 3 . The films grown at all voltages in this work were p type in electrical conduction, with bandgaps in the range of (1.70-1.80) eV in both as-deposited and heat-treated forms. The wetting property of In x Se y on glass/FTO surfaces indicates that In x Se y layers can be helpful as buffer layers or window layers in thin film solar cell development due to their ability to uniformly cover the substrate. The crosssection morphology show smoothening effect of these layers. The experimental results to date are presented in this paper.

Properties of spray deposited nanocrystalline indium selenide thin films

“…As a result of this, charge carriers have to face maximum number of grain boundaries during charge flow, hence resistivity increases. The resistivity results of the thin films are consistent with other studies [24,26]. The values of activation energies (E a ) were determined by Arrhenius equation given by [46] …”

“…Generally, the deposition of metal selenide thin films is a challenge to precisely control the grain size, shape and the stoichiometric composition of deposit material. Many groups have contributed to the development of In 2 Se 3 thin films by various deposition techniques including vacuum [16], modified chemical bath deposition [17,18], metalorganic chemical vapor deposition (MOCVD) [19], molecular beam epitaxy [20], sputtering [21,22], electrodeposition [23,24], thermal evaporation technique [25,26], spray pyrolysis [27,28] etc.…”

Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

“…In 2 Se 3 exhibits at least three different crystalline modifications denoted as α, β and γ with transition temperatures of 200 and 650°C, respectively for α → β and β → γ transition [16][17]. Indium chalcogenide thin films can be prepared by using various deposition techniques like chemical bath deposition [18][19], sputtering [20][21][22], solvothermal method [23], MOCVD [24] electrochemical technique [25], electrodeposition [26,27] and spray pyrolysis technique [28][29] etc. Yong Yan et al [20][21][22] have deposited In 2 Se 3 films by magnetron radio-frequency (RF) sputtering technique and subsequently analyzed these films by various characterization techniques.…”

Progress in development of graded bandgap thin film solar cells with electroplated materials

“…Although CdS proves the best heterojunction partner to CdTe due to the comparatively low lattice mismatch of 10% [42] In x Se y was incorporated into the glass/FTO/n-In x Se y /n-CdS/nCdTe/Au due to its excellent wetting property on FTO surface [20]. The In x Se y was deposited from an aqueous electrolytic bath containing 0.10 M InCl 3 and 0.025 M SeO 2 [20].…”

“…The In x Se y was deposited from an aqueous electrolytic bath containing 0.10 M InCl 3 and 0.025 M SeO 2 [20]. At a low [37][38], the low R sh which suggest high leakage current was observed in dark condition as shown in Table 1.…”