Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process

Zhou, Zhongyue; Cui, Rongqiang; Qian-Jun, Pang; Wang, Y.D.; Meng, Fanliang; Sun, Tongming; Ding, Z.M.; Xia, Guanglin

doi:10.1016/s0169-4332(00)00862-x

Cited by 85 publications

(31 citation statements)

References 11 publications

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“…Because all the peaks detected in the XRD patterns could be attributed to tetragonal SnO 2 , it was found that the change in substrate temperature did not affect the type of modifier. If the XRD patterns obtained with different samples are compared, the patterns for samples prepared at room temperature and those prepared at 373 K were almost identical, but the sample prepared at 423 K showed (200) peak intensity with increasing substrate temperature has also been reported by Liu and Zhou [19,20]. An increase in peak intensity with increasing substrate temperature was also observed for the (110) peak.…”

Section: Partial Oxygen Pressuresupporting

confidence: 67%

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Abe

Higashide

Inoue

et al. 2007

Plasma Chem Plasma Process

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Fine particles were modified with a thin film of SnO 2 by using a barrel sputtering system that is a dry process. The conditions for the preparation of SnO 2 were studied by reactive sputtering onto a glass plate substrate. The optimal conditions for the preparation of tetragonal SnO 2 were identified as 60% partial oxygen pressure and 1.0 Pa total gas pressure with the substrate at room temperature. Under the optimized conditions, the surfaces of Al flake particles were modified with a thin film of SnO 2 . XRD and SEM/EDS analysis of the prepared samples showed that the Al particle surfaces were uniformly modified by a thin film of SnO 2 in all cases. The film thicknesses were 80, 130, and 180 nm at RF outputs of 195, 350, and 490 W. These measured thicknesses coincided with the values estimated from the interference colors of the samples.

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Section: Partial Oxygen Pressuresupporting

confidence: 67%

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Abe

Higashide

Inoue

et al. 2007

Plasma Chem Plasma Process

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“…In Fig. 3 are also shown curves of (αhν) 2 vs hν which were used to determine the optical band gap Eg of the ITO and SnO 2 :F films; We have obtained values of Eg = 3.95 eV for ITO and 4.07 eV for SnO 2 , which are similar to those reported elsewhere [13]. It is also observed that the refractive index of the SnO 2 films is significantly greater than that the ITO's.…”

Section: From the Interference Fringes Observed In The Transmission Ssupporting

confidence: 80%

Synthesis and characterization of highly transparent and conductive SnO2:F and In2O3:Sn thin films deposited by spray pyrolysis

Riveros¹,

Romero²,

Gordillo³

2006

Braz. J. Phys.

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Highly transparent and conductive thin films of SnO 2 :F and In 2 O 3 :Sn (ITO) have been prepared on glass substrates using the simple pyrolitic (spray) method. Through an exhaustive parameter study and using as diagnostic method for the film quality a figure of merit defined as a function of both, the transmittance and the electric resistivity, the conditions to prepare the SnO2:F and ITO films, with adequate properties to be used as transparent front contact for solar cells, were achieved. A relevant contribution of this work is related with the deposition of SnO 2 :F and ITO films with the mentioned characteristics, using a solution synthesized in our laboratory by dissolving the precursor metals in HCl. Transparent conducting oxide (TCO) thin films were obtained, with transmittances greater than 80% and resistivities smaller than 7x10 −4 Ω·cm, results which are comparable with those obtained using commercial reactants. Results concerning the influence of the synthesis parameters on the optical, electrical and structural properties of the TCO films are reported.

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“…The structure of carbon nitride thin film solar cells ITO/a-CNJAI was described elsewhere [ 14,15]. A number of Schottky solar cells having this structure were produced based on a set of depositing conditions.…”

Section: Methodsmentioning

confidence: 99%

Effects of Ion Bombarding and Nitrogenation on the Properties of Photovoltaic a-CN_x Thin Films

et al. 2001

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Amorphous carbon nitride films (a-CN.) were synthesized by using single ion beam sputtering of a graphite target in argon and nitrogen sputtering gases. This thin film could be used as a novel photovoltaic material. The films were characterized with the technique of laser Raman, spectroscopic ellipsometry and electron spin resonance spectrometer (ESR). In this paper we report the effects of ion impacting and nitrogenation on the microstructure, density of defect states, bonding character, optical and photovoltaic properties. Effective decreasing of intensity of the ESR signal and formation of C-N bonding were observed, which could be attributed to the increment of the impinging ions on the growing films. The nitrogenation of a-CNx films could decrease the Tauc optical gap (0.62-0.86eV) and the intensity of ESR signal, increase photon absorption coefficient of the films (106-10 4 cm').The primary photovoltaic values of the devices having Schottky structure of ITO/CN./Al are I, 1.56 il A/cm 2 and Vo. 250 mV, respectively, when exposed to AM1.5 illumination ( 100oW/cm 2

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Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process

Cited by 85 publications

References 11 publications

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Synthesis and characterization of highly transparent and conductive SnO2:F and In2O3:Sn thin films deposited by spray pyrolysis

Effects of Ion Bombarding and Nitrogenation on the Properties of Photovoltaic a-CN_x Thin Films

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Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process

Cited by 85 publications

References 11 publications

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Surface Modification of Fine Particles with a SnO2 Film by Using a Polyhedral-Barrel Sputtering System

Synthesis and characterization of highly transparent and conductive SnO2:F and In2O3:Sn thin films deposited by spray pyrolysis

Effects of Ion Bombarding and Nitrogenation on the Properties of Photovoltaic a-CNx Thin Films

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Effects of Ion Bombarding and Nitrogenation on the Properties of Photovoltaic a-CN_x Thin Films