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We have carried out a detailed investigation of photocurrent spectra in Pb1−xSrxSe thin films grown by molecular-beam epitaxy on BaF2 substrates with Sr composition from 0.066 to 0.276 under different temperatures from 77 to 300 K. Strong room temperature infrared detection has been demonstrated with the wavelength from 1.0 to 3.1 μm. By employing a diffusion-recombination model to analyze the temperature- and Sr composition-dependent photocurrent, we find that the photocurrent in the investigated PbSrSe thin films is dominated by bulk excitation, recombination, and transport processes. For the application of infrared detection, the optimal thickness for PbSrSe thin films should be less than 2.5 μm.

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