Preparation of manganese silicide thin films by solid phase reaction

Wang, Jinliang; Hirai, Masaaki; Kusaka, M.; Iwami, Motohiro

doi:10.1016/s0169-4332(96)00823-9

Cited by 48 publications

(19 citation statements)

References 13 publications

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“…12,13 Depending on the deposition and annealing parameters the formation of manganese silicide films of different stoichiometries has been reported, namely, MnSi, MnSi 1.7 , and Mn 5 Si 3 . 1 Since Schottky barriers have been successfully used as tunnel contacts 2 this substantiates the hope that the Mn-Si system has the potential to be utilized as spin injectors in future spintronics devices.…”

Section: Introductionmentioning

confidence: 99%

Ostwald ripening of manganese silicide islands on Si(001)

Krause

Stollenwerk

Licurse

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The deposition of Mn onto Si͑001͒ in the submonolayer regime has been studied with scanning tunneling microscopy to gain insight into the bonding and energetics of Mn with Si. The as-deposited Mn films at room temperature are unstructured. Upon annealing to 300-700°C three-dimensional islands of Mn or Mn x Si y form while between the islands the Si͑001͒-͑2 ϫ 1͒ reconstruction becomes visible. With increasing annealing time the density of islands per surface area decreases while the average height of the remaining islands increases. The large islands grow in size at the expense of the small ones, which can be understood in the context of Ostwald ͓Z. Phys. Chem. 34, 495 ͑1900͔͒ ripening theory. The average island height shows a time dependence of H ϳ t 1/4 , indicating that surface diffusion is the growth limiting process.

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Section: Introductionmentioning

confidence: 99%

Ostwald ripening of manganese silicide islands on Si(001)

Krause

Stollenwerk

Licurse

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…It is known that MnSi could further react with Si to eventually form the most silicon rich silicide. 15,16 Thus, when the temperature of the furnace is increased to 750 C, the product obtained is entirely Mn 27 Si 47 . According to above discussion, the process of the formation of the Si/manganese silide core/shell nanowire arrays could be proposed as follows.…”

Section: Resultsmentioning

confidence: 99%

“…It was found that no manganese silicides could be obtained when the annealing temperature is below 600 C, which is a little higher than that reported in some literatures. 15,16 This result may be attributed to the higher energy required for breaking the Mn-Cl bond than that of the Mn-Mn bond. 17 From the XRD patterns [ Fig.…”

Section: Resultsmentioning

confidence: 99%

Ferromagnetic Si/Mn27Si47 core/shell nanowire arrays

Liu

She

Ling

et al. 2011

Journal of Applied Physics

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Arrays of Si/Mn27Si47 core/shell nanowire (NW) are synthesized by an in situ reaction between Si NW arrays and MnCl2. Results from XRD and transition electron microscopy (TEM) indicated that the shells have single-crystalline tetragonal Mn27Si47 structure with the axial direction perpendicular to (204) face. The thickness of the Mn27Si47 shell can be controlled by adjusting the growth conditions. The Si/Mn27Si47 NW arrays exhibited enhanced ferromagnetism compared with the bulk higher manganese silicides (HMS). The Curie temperature of the Si/Mn27Si47 core/shell NW arrays is about 150 K, which is much higher than that of the bulk HMS. Due to the excellent compatibility of Si/Mn27Si47 with Si-based nanowire devices, these core/shell structures should have wide potential applications in the Si-based self-assembly nanowire devices.

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“…There has been much interest in the high manganese silicides near MnSi1.7 over the past decade due to their possible use in applications ranging from thermoelectrics [Rebien et al, 2002;Teichert et al, 1996;Hou et al, 2005;Hou et al, 2007], to optoelectrics [Teichert et al, 1996;Hou et al, 2005;Hou et al, 2007;Gao et al, 2007], to photovoltaics [Rebien et al, 2002;Gao et al, 2007], and other silicon-based electronics applications. [Yang et al, 2001;Wang et al, 1997] Among the 3d transition metal silicides, only MnSix exhibits any ferromagnetic behavior. [Suplice et al, 2004;Gottlieb et al, 2003] Further, films with x∼1.7 exhibit the characteristics of semiconductors, whereas films with x∼1, are metals.…”

Section: Introductionmentioning

confidence: 99%

“…[Suplice et al, 2004;Gottlieb et al, 2003] Further, films with x∼1.7 exhibit the characteristics of semiconductors, whereas films with x∼1, are metals. [Hou et al, 2005;Wang et al, 1997] Thus, the ferromagnetic properties of the MnSi1.7 phases have garnered further interest for use in spintronics applications as an ideal material to serve as spin injectors. Krause et al, 2006;Mangano et al, 2006] The small lattice mismatch (∼1.9%) between the HMSs and Si would enhance the epitaxial growth of thin films on the Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth and Magnetic Characterization of High Manganese Silicide Thin Films

Waite¹,

Shah²

2018

IJPA

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Manganese silicide thin films have been successfully deposited by dc magnetron sputtering with Mn concentrations up to the high manganese silicide (HMS) range near MnSi1.7. We observed the formation of a number of tetragonal crystallite phases, including Mn4Si7, Mn27Si47, and Mn15Si26, which are commonly referred to in the literature as near MnSi1.7 or HMS; all of these phases have been confirmed using X-ray Diffraction. The formation of more HMS phases begin to appear at Mn concentrations around 29%, with XRD patterns clearly exhibiting the formation of the HMS phases with increased Mn concentrations. The low temperature saturation magnetization of these films increases with increased Mn concentration with a peak value of 100emu/cc for films near the MnSi1.7 range. Films are paramagnetic at room temperature but start to exhibit ferromagnetism at low temperatures with the Mn concentrations around 35%, which corresponds to the MnSi1.7 phases. Films close to MnSi1.7 have a coercivity of about 300 Oe.

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Preparation of manganese silicide thin films by solid phase reaction

Cited by 48 publications

References 13 publications

Ostwald ripening of manganese silicide islands on Si(001)

Ostwald ripening of manganese silicide islands on Si(001)

Ferromagnetic Si/Mn27Si47 core/shell nanowire arrays

Growth and Magnetic Characterization of High Manganese Silicide Thin Films

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